FQB17P10TM

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.75W (Ta), 100W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1100pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	39nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	190 mOhm @ 8.25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	16.5A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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• Introduction to FQB17P10TM

FQB17P10TM is a high voltage fast switching N-Channel MOSFET developed by the semiconductor enterprise Fujitsu. It is rated at 10-amp and up to 47 volts, making it suitable for applications where high switching speed, low losses and moderate voltage capability are required. The product is designed for maximum reliability, since it has lower gate capacitance and a self-locking structure, which enables its drain-source diode to be able to withstand reverse voltages up to ±45V. The device is encapsulated in a small and lightweight 2x2x0.75mm plastic power package and is designed to have a maximum junction temperature of 175oC and a maximum storage temperature of 175oC.

• FQB17P10TM Application Field

The FQB17P10TM has a wide range of applications, such as in automotive, industrial, medical, and consumer electronics. It is commonly used in applications that require fast switching and high-voltage, when a power MOSFET with a high-drain breakdown voltage and a low on-resistance is required. In automotive applications, the device is suitable for platforms such as oxygen control, with its low on-resistance and high-drain breakdown voltage allowing for improved fuel efficiency. It is also used in automotive lighting and charging systems, with its low on-resistance allowing for lower losses and improved system efficiency. In industrial applications, the device is commonly used for DC/DC buck converters, AC-DC power supplies and motor control systems, as it has a high-drain breakdown voltage and low on-resistance, enabling it to withstand high voltages and low on-resistance to provide improved system efficiency. In medical applications, the device is optimal for applications such as heart pacemakers and infusion pumps. Its low on-resistance and high-drain breakdown voltage provide improved system efficiency and reliability. In consumer electronics, the device is often used for audio and video applications, as it has low on-resistance and a high-drain breakdown voltage that allows for improved performance and an improved image clarity.

• FQB17P10TM Working Principle

The FQB17P10TM is a high voltage fast switching N-Channel MOSFET. It works by channeling current from its source terminal to its drain terminal. The gate terminal is the controlling terminal of the device. When a voltage is applied to the gate terminal, current is allowed to flow from source to drain. The device is protected by its self-locking structure, which ensures its reverse voltage withstand capability up to ±45V. Additionally, it has a low gate capacitance which means that it can respond to input signals quickly. It is also protected from electrostatic discharge (ESD), with its maximum junction temperature of 175oC and a maximum storage temperature of 175oC.

• Conclusion

In conclusion, the FQB17P10TM is a high voltage fast switching N-Channel MOSFET from Fujitsu, designed for maximum reliability. It is designed for applications where high switching speed, low losses and moderate voltage capability are required. It is commonly used for automotive, industrial, medical, and consumer electronics applications, due to its low on-resistance and high-drain breakdown voltage. The device works by channeling current from its source terminal to its drain terminal, with a voltage applied to the gate terminal enabling current to flow from source to drain.

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