Allicdata Part #: | FQB17P06TM-ND |
Manufacturer Part#: |
FQB17P06TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 17A D2PAK |
More Detail: | P-Channel 60V 17A (Tc) 3.75W (Ta), 79W (Tc) Surfac... |
DataSheet: | FQB17P06TM Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 8.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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.The FQB17P06TM is a type of field-effect transistor (FET) that is quickly becoming one of the most popular components in the semiconductor industry. The FQB17P06TM is a single-gate MOSFET that is used for a wide variety of applications due to its power efficiency and operational reliability. In this article, we will discuss the various application fields and working principles of the FQB17P06TM.
The FQB17P06TM is a single-gate, n-channel enhancement-mode MOSFET, which means that it requires a positive gate voltage to turn on. It is designed with a drain-source breakdown voltage of less than 17V, making it suitable for a variety of low power applications. The maximum continuous drain current that can be handled by this device is 40A, while it is able to offer a drain-source on-state resistance of 2.3 mOhm. The device also has a maximum gate-source voltage of 20V, making it well-suited for power applications.
Due to its low on-state resistance, low threshold voltage, and low gate voltage, the FQB17P06TM is an ideal candidate for use in switching applications. It is used in a wide variety of power management circuits, such as buck converters, charging switches, and gate drivers. In addition, it can be used in lightweight switch-mode power supply designs where power efficiency is of utmost importance.
In addition to its homes in the consumer electronics industry, the FQB17P06TM is also used in automotive applications. It is used in electric power steering systems, engine control module designs, and DC/DC converters in electric vehicles. The device is able to offer high speed switching performance and excellent thermal management capabilities in a wide range of temperature conditions.
The FQB17P06TM is a relatively simple MOSFET device to use and understand. In terms of its working principles, the FQB17P06TM uses the threshold voltage of the device to determine when it will conduct. When the gate voltage of the device reaches a certain level, the device will turn on, allowing current to flow between the drain and source. The same principle applies when the device is turned off. If the gate voltage falls below the threshold voltage, the FQB17P06TM will turn off, and current will not flow.
The FQB17P06TM is an excellent choice for a wide variety of applications due to its low on-state resistance, low gate voltage, and low threshold voltage. It is well-suited for consumer electronics as well as automotive applications, and its operational reliability ensures that it can be used in more advanced environments. In conclusion, the FQB17P06TM is a reliable and power efficient single-gate MOSFET that is ideal for a range of switching applications.
The specific data is subject to PDF, and the above content is for reference
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