
Allicdata Part #: | FQB19N20TMTR-ND |
Manufacturer Part#: |
FQB19N20TM |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 19.4A D2PAK |
More Detail: | N-Channel 200V 19.4A (Tc) 3.13W (Ta), 140W (Tc) Su... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.69000 |
10 +: | $ 0.66930 |
100 +: | $ 0.65550 |
1000 +: | $ 0.64170 |
10000 +: | $ 0.62100 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 140W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 9.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 19.4A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FQB19N20TM is one of a wide range of MOSFETs (Field Effect Transistors) available for use in a number of applications. The FQB19N20TM is a single enhancement MOSFET, meaning that current flows normally when the Gate voltage is low, but can be increased by applying a voltage to the Gate pin.
The FQB19N20TM has a maximum output current of 19A and an On-Resistance (RDS(On)) of 0.02 Ohms, making it a high power component enabling significant current to be switched. The FQB19N20TM is a N-Channel MOSFET, meaning electrons are the majority carriers. This component has a maximum Drain-Source voltage of 20V and a Gate-Source voltage of ±20V, making it ideal for use in applications that require switching larger voltages.
The FQB19N20TM is a logic level transistor, meaning it is often used in digital circuits as a switch. While any MOSFET component can be used in this way, logic level MOSFETs are specially designed with a reduced threshold voltage, typically between 1 and 2V depending on the component. This enables them to be switched on and off using the low voltage signals produced by digital ICs.
Another typical use of the FQB19N20TM is as a Power Switch. By connecting additional components such as relays or opto-isolators to the Gate pin, it is possible to switch higher voltages than the component itself can manage, and also provide electrical isolation between the Gate and the higher voltage. The FQB19N20TM is also commonly used in motor control, allowing the current to be shut off when necessary.
The basic physics behind the FQB19N20TM operation is the same as any other MOSFET device. The source, drain, and gate pins form a three terminal device, and a potential across the drain and source allows for current to flow from the source to the drain. By applying a voltage to the gate pin, the potential across the drain and source is decreased, decreasing the current that is allowed to flow, and effectively turning the device “off”. The amount of current flowing can be further reduced by using a larger gate voltage.
This simple switching action makes the FQB19N20TM an ideal component for a variety of applications, and its easy integration with digital circuitry allows it to be used as both a switch and a power control component. The FQB19N20TM is available in a variety of packages and pin-outs, and is likely to be found in many applications requiring the ability to switch or provide current control.
The specific data is subject to PDF, and the above content is for reference
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