Allicdata Part #: | FQB13N10LTM-ND |
Manufacturer Part#: |
FQB13N10LTM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 12.8A D2PAK |
More Detail: | N-Channel 100V 12.8A (Tc) 3.75W (Ta), 65W (Tc) Sur... |
DataSheet: | FQB13N10LTM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 65W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 520pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 5V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 6.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12.8A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FQB13N10LTM is a robust and efficient power MOSFET transistors. This type of transistor is primarily used for the regulation of high-power electrical circuits. The FQB13N10LTM is the most reliable and safest MOSFET transistor available in the market today. It has high switching speed and low on-state resistance.
FQB13N10LTM transistors are mainly used for switching applications in electric circuits. They are also useful for switching high power to low power circuits. The FQB13N10LTM transistors provide an efficient and reliable on-state conduction in electric circuits. The FQB13N10LTM transistors are widely used for applications such as motor control, switching power supply, automotive applications, and power audio. They are also useful for load switching applications. Their use in high power applications has become increasingly popular due to their reliable on-state conduction.
The FQB13N10LTM transistor is a type of N-type MOSFET. N-type MOSFET transistors are used to carry an either an NPN or PNP type of transistor. The FQB13N10LTM is designed with an N-type drain region since it has good junction characteristics, low thermal resistance, and a low on-state voltage drop. This MOSFET transistor is designed with a P-type body to reduce the on-state resistance and improve the turn-on speed. It also has the capability to maintain the on-state resistance at a low voltage.
The FQB13N10LTM transistor works by blocking the electric current from entering the device when it is in the off-state. However, when the gate voltage is increased, this transistor will turn on and allow current to flow through it. The current flows through the channels and is regulated by the threshold voltage, which is the voltage between the source and the drain. When the voltage threshold is met, the current flow is regulated and controlled. This type of transistor is useful for load switching applications and for regulating high power circuits.
The FQB13N10LTM transistors offer several advantages. It works at high frequencies and provides high switching speeds, low on-state voltage drops, and low on-state resistances. It also has a large breakdown voltage range, which helps ensure safe operation. Additionally, the FQB13N10LTM transistors offer good temperature stability and are compatible with both single and multiple input logic circuits. Finally, they feature excellent thermal performance and low gate capacitance.
The FQB13N10LTM helps provide efficient and reliable power regulation in high-power circuits. It is designed with an N-type drain region, which provides good junction characteristics, low thermal resistance, and low on-state voltage drop. It is an excellent choice for load switching, motor control, and switching power supply applications. The FQB13N10LTM also features high switching speeds, low on-state voltage drops, and low on-state resistances.
The specific data is subject to PDF, and the above content is for reference
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