| Allicdata Part #: | FQB15P12TM-ND |
| Manufacturer Part#: |
FQB15P12TM |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 120V 15A D2PAK |
| More Detail: | P-Channel 120V 15A (Tc) 3.75W (Ta), 100W (Tc) Surf... |
| DataSheet: |  FQB15P12TM Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D²PAK (TO-263AB) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.75W (Ta), 100W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 200 mOhm @ 7.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
| Drain to Source Voltage (Vdss): | 120V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The FQB15P12TM is a P-Channel enhancement-mode field effect transistor used widely in today\'s electronics market. The transistor is capable of driving loads of up to 4A and is used in a variety of electronic applications, from power supply amplifiers to low-power RF devices. The FQB15P12TM has the following characteristics that make it suitable for a wide range of applications.
The FQB15P12TM is a discrete component available as a component (or as a part of a larger device). The transistor is rated for maximum voltage of 25V and is capable of driving loads up to 4A. The transistor is an enhancement mode device, meaning that it requires a voltage of at least one diode drop greater than the Gate-Source voltage in order to turn on. This ensures that the device is not conducting when it is not supposed to be, which makes it suitable for a wide range of applications. Additionally, the device has a Turn-On and Turn-Off time of 5ns and 1.5ns respectively, making it suitable for controlling high speed signals.
The FQB15P12TM is made using a P-Channel MOSFET technology, which makes it capable of handling large amounts of current without suffering breakdown. This is a key requisite for many power electronics applications, where high load currents are handled. The device also has a low on-state resistance, which is a measure of how easily electricity can flow through it. The device is housed in an SOT-23 package, making it suitable for space-constrained applications.
The FQB15P12TM can be deployed in a variety of different fields, including:
The FQB15P12TM operates using the same principle as all P-Channel MOSFETs. The device is composed of a source, a drain and a gate. When the gate is made more positive than the source, the transistor is in its “on” state, allowing current to flow from the source to the drain. The higher the voltage applied to the gate, the lower the resistance of the device and the more current that is able to flow through it.
When the gate is made more negative than the source, the transistor is in its “off” state, blocking any current from flowing from the source to the drain. The lower the voltage applied to the gate, the higher the resistance of the device and the less current that is able to flow through it.
In conclusion, the FQB15P12TM is a P-Channel MOSFET integrated into an SOT-23 package. It has an operating voltage range of up to 25V and is capable of driving loads up to 4A. The device is suitable for a wide range of applications, including power supply amplifiers, low-power RF devices, motor control and linear applications. The device operates using the same principle as all P-Channel MOSFETs and is an example of an enhancement mode transistor.
Overview
The FQB15P12TM is a discrete component available as a component (or as a part of a larger device). The transistor is rated for maximum voltage of 25V and is capable of driving loads up to 4A. The transistor is an enhancement mode device, meaning that it requires a voltage of at least one diode drop greater than the Gate-Source voltage in order to turn on. This ensures that the device is not conducting when it is not supposed to be, which makes it suitable for a wide range of applications. Additionally, the device has a Turn-On and Turn-Off time of 5ns and 1.5ns respectively, making it suitable for controlling high speed signals.
The FQB15P12TM is made using a P-Channel MOSFET technology, which makes it capable of handling large amounts of current without suffering breakdown. This is a key requisite for many power electronics applications, where high load currents are handled. The device also has a low on-state resistance, which is a measure of how easily electricity can flow through it. The device is housed in an SOT-23 package, making it suitable for space-constrained applications.
Application Fields
The FQB15P12TM can be deployed in a variety of different fields, including:
- Power Supplies: The FQB15P12TM can be used in power supplies for portable devices as it supports load currents up to 4A and has a low on-state resistance. This ensures that minimal power loss occurs during operation.
- RF Applications: The FQB15P12TM is an ideal choice for applications such as low-power RF up-conversion, providing high-speed switching with minimal losses.
- Motor Control: The FQB15P12TM is a suitable choice for motor control applications as it can provide load currents up to 4A and is housed in a small package suitable for space-constrained applications. Furthermore, the low on-state resistance helps to ensure minimal power losses.
- Linear Applications: The FQB15P12TM can be used in linear application where low-distortion is desired, as the device provides high-fidelity signal processing with minimal power loss.
Working Principle
The FQB15P12TM operates using the same principle as all P-Channel MOSFETs. The device is composed of a source, a drain and a gate. When the gate is made more positive than the source, the transistor is in its “on” state, allowing current to flow from the source to the drain. The higher the voltage applied to the gate, the lower the resistance of the device and the more current that is able to flow through it.
When the gate is made more negative than the source, the transistor is in its “off” state, blocking any current from flowing from the source to the drain. The lower the voltage applied to the gate, the higher the resistance of the device and the less current that is able to flow through it.
Conclusion
In conclusion, the FQB15P12TM is a P-Channel MOSFET integrated into an SOT-23 package. It has an operating voltage range of up to 25V and is capable of driving loads up to 4A. The device is suitable for a wide range of applications, including power supply amplifiers, low-power RF devices, motor control and linear applications. The device operates using the same principle as all P-Channel MOSFETs and is an example of an enhancement mode transistor.
The specific data is subject to PDF, and the above content is for reference
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