FQB12N50TM_AM002

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.13W (Ta), 179W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2020pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	51nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	490 mOhm @ 6.05A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	12.1A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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FQB12N50TM_AM002 is an N-channel enhancement mode MOSFET transistor, which belongs to the family of FETs (Field Effect Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). It has a single package with contact resistance and low electrical power, making it ideal for switch and linear applications.The FQB12N50TM_AM002 offers superior performance for applications that require extremely low thermal resistance. The operating temperature range for this particular type of FET transistor is −55 °C to 150 °C. It is also extremely resistant to ESD (electrostatic discharge), making it ideal for use in harsh electrical environments.The main difference between FETs and MOSFETs is that the source and drain of the FETs are connected to each other in a way that allows current flow between them, while the source and drain of the MOSFETs remain electrically insulated. This allows the MOSFETs to be used to turn on or off the transistor with a single gate signal.The FQB12N50TM_AM002 is a single-gate MOSFET transistor. It is usually operated in the enhancement mode. This means that when the gate voltage of the transistor is driven beyond the threshold voltage, current flows from the source to the drain. As the gate voltage increases, the amount of current flowing from the source to the drain also increases. The FQB12N50TM_AM002 has an RDS(ON) of 1.9 mΩ. This means that with a gate voltage of 4.5V and a current of one ampere, the RDS(ON) resistance is 1.9 mΩ. The gate threshold voltage for this transistor is typically 2.6V.The FQB12N50TM_AM002 is ideal for switching and amplification applications due to its low on-resistance capability. Its use in linear applications can be maximized when operated with a negative gate-source voltage. This ensures that the source-drain current increases with the drain voltage, making it an efficient linear amplifier.The FQB12N50TM_AM002 finds application in a variety of fields, such as automotive, consumer, industrial and medical electronics. It is widely used in various power circuits such as dc-dc converters, switching regulators, power supply circuits and motor control circuits. It is also suitable for portable, low power analog and logic circuits, as well as for RF circuits.The FQB12N50TM_AM002 is a highly reliable and robust single-gate MOSFET transistor, which offers good performance and excellent power handling capability. It is an ideal solution for applications that require superior performance and low thermal resistance. With its low on-resistance and single-gate design, the FQB12N50TM_AM002 helps to minimize power losses and control the operating temperature range, making it ideal for a wide range of electronic applications.

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