FQB13N06LTM

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The FQB13N06LTM is a high-electron mobility transistor (HEMT). It is a silicon-germanium (SiGe) based, N-channel enhancement-mode field-effect transistor (FET). It is designed to provide high-power gains and low-noise operation in order to enable the applications in high-frequency, high-efficiency RF circuits up to 6GHz.

The FQB13N06LTM is designed to be used in amplifiers, oscillators and digital circuits, as well as microwave devices, such as power amplifiers, high-power amplifiers, mixers and receivers.

The FQB13N06LTM is optimized to provide high breakdown voltage, high switching speed and low input capacitance compared to traditional RF FETs, making it suitable for high-efficiency and high-power systems.

The FQB13N06LTM can be used for the amplification of signals from DECT cordless phones, Wi-Fi and other IEEE 802.11b/g/n systems, Bluetooth, as well as automotive, aerospace and industrial applications requiring high-performance power amplifiers.

The FQB13N06LTM is fabricated with a SiGe process composed of a semiconductor stack providing excellent low-low noise performance and high-frequency operation.

The FQB13N06LTM is a depletion-mode device. It has an N-channel number and operates in depletion mode. It is composed of a single layer of crystalline SiGe material. The gate source voltage (VGS) of the device is zero volts. The drain source voltage (VDS) of the FQB13N06LTM is high positive currents while the drain source current (ID) is low positive currents.

The FQB13N06LTM has excellent linearity, good gain and low noise figure along with high drain efficiency and gate capacitance which makes it suitable for high frequency applications requiring stringent linearity and switching performances.

The FQB13N06LTM provides excellent switching performance with low gate threshold and low turn-on time. Its low parasitic gate-source capacitance and low gate resistance allow for high-speed switching of the device. This makes it suitable for use in high-speed and high-frequency applications.

The FQB13N06LTM has a wide drain-source voltage range, which allows for low-power operation when used in low-voltage, VDS-biased circuits. The low RDS(ON) of this device enables high efficiency, enabling power amplifiers to operate in Class-D, where power is switched directly across the drain source junction.

The FQB13N06LTM is available in a compact package, making it suitable for high-density applications. The device also features a low thermal resistance and a long channel life, allowing it to be used in high current levels to maintain high efficiency.

The FQB13N06LTM is ideal for use in RF power amplifiers, high efficiency oscillators, Class-D amplifiers and other applications requiring high power, low noise, and high gain performance.

With its high breakdown voltage, high switching speed and low input capacitance, the FQB13N06LTM is an ideal device for use in high frequency, high efficiency RF applications in the communication, industrial, automotive and aerospace industries.

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