Allicdata Part #: | FQB16N25CTM-ND |
Manufacturer Part#: |
FQB16N25CTM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 250V 15.6A D2PAK |
More Detail: | N-Channel 250V 15.6A (Tc) 3.13W (Ta), 139W (Tc) Su... |
DataSheet: | FQB16N25CTM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 139W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1080pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 53.5nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 270 mOhm @ 7.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15.6A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FQB16N25CTM is a PolarPAK MOSFET (metal-oxide-semiconductor field-effect transistor) device specifically designed for high-speed logic applications. Specifically, this device is a n-channel power MOSFET optimized to provide low on resistance as well as high load performance for logic level control. While there are a variety of types of transistors, power MOSFETs such as the FQB16N25CTM are particularly suited for applications requiring high-speed switching at low voltages.
The FQB16N25CTM is a single-gate MOSFET, meaning it is composed of a single active gate. This type of transistor is commonly used in digital circuits, due to its high input impedance, its compatibility with standard logic levels, and its low on resistance. When a voltage is applied to the gate, the output is connected to the drain, creating an electrical channel through which charge carriers flow. This channel is controlled by the voltage applied to the gate, which in turn determines the current flow through the transistor.
The FQB16N25CTM is an ideal choice for a variety of high-speed applications, such as switching power converters, reversing motors, and H-bridge drive circuits. This device is designed to handle up to 25 volts, allowing it to be used in a wide range of circuits. Its low on resistance also means it can be used for low power applications, such as in logic gates. Additionally, its low gate charge (Qg) allows for fast switching speeds, so it is also well suited for fast timing circuit applications.
The FQB16N25CTM is designed for easy installation and maintenance. This device is packaged in an industry-standard TO-220AB surface-mount package, and includes a dedicated drain pin. This makes the installation process simple and straightforward. Additionally, this device is RoHS compliant, ensuring it is safe to use in a variety of industrial, commercial, and consumer applications.
In summary, the FQB16N25CTM is an ideal choice for high-speed switching applications. It is designed to handle up to 25 volts, and its low on resistance provides excellent performance. Additionally, this device is easy to install and maintain, making it suitable for a wide variety of applications. As such, the FQB16N25CTM is a reliable and cost-effective transistor for high-speed logic applications.
The specific data is subject to PDF, and the above content is for reference
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