FQB17N08LTM

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The FQB17N08LTM is a single N-Channel MOSFET of 17-A, 8V VDSS and transistor package type TO-220AB, which has a very wide range of applications. It mainly achieves its operation through the modulation of drain-source voltage and current and is used for power supply circuits, motor drives and other applications. In this article, we will look at the features, applications and the working principle of FQB17N08LTM.

Features of FQB17N08LTM

The FQB17N08LTM has a 17 Amp continuous drain current and 8 Volts drain-source breakdown voltage. This high current and low voltage rating allows it to be reliably used in most of the power MOSFET applications. Apart from this, it also has a low gate threshold voltage of 3.2V, which allows its unrestricted use in high current applications. The low temperature coefficient of its threshold voltage also ensures high stability of its voltage characteristics. Moreover, it has a larger power dissipation capability, which allows it to handle high current applications. Consequently, FQB17N08LTM is very suitable for device level protection and motor driving applications.

Applications of FQB17N08LTM

The FQB17N08LTM is mostly used for high-current motor driving applications. Its low gate threshold voltage makes it suitable for low voltage power supplies and its larger power dissipation capability also makes it suitable for high current applications. Furthermore, it finds application in device level protection circuits, in automotive and industrial power supplies, used as a switch in high-side switching circuits, and in many other similar applications. FQB17N08LTM can also be used in power supply circuits that require low voltage and high current. Its low temperature coefficient also makes it reliable for use in high temperature applications.

Working Principle of FQB17N08LTM

FQB17N08LTM works on the principle of Gate-Source modulation. When the gate-source voltage is applied, the FQB17N08LTM is triggered and it conducts. The voltage applied to the Gate determines the amount of current that flows through the MOSFET. Lower gate-source voltages cause less current to flow, while greater voltages application results in higher current passing through the FQB17N08LTM. Therefore, FQB17N08LTM can be used to control the voltage and current of the devices connected to it. The FQB17N08LTM also has a low gate threshold voltage which makes it suitable for low voltage applications. The low gate threshold voltage also helps in increasing the speed at which the voltage and current changes in the device.

FQB17N08LTM is also known as a linear voltage regulator, which is a type of device that helps regulate the voltage and current of the devices connected to it. It does this by modulating the drain-source current to a desired level. When the gate source voltage is applied, the higher voltage allows more current to pass through the transistor. As the gate source voltage increases, the current through the MOSFET increases and vice versa. This helps FQB17N08LTM regulate the voltage and current in the device it is connected to.

In conclusion, FQB17N08LTM is a single N-Channel MOSFET of 17-A, 8V VDSS and transistor package type TO-220AB, which is a very versatile device that can be used in a wide range of applications. It is used in power supply circuits, motor drives and other such applications. It works on the principle of Gate-Source modulation and is also used as a linear voltage regulator. It has a low gate threshold voltage and a high power dissipation capability, which makes it suitable for use in high current applications.

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