FQB10N60CTM

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The FQB10N60CTM is a high voltage, high speed, and fast switching silicon carbide MOSFET. It is a wide bandgap semiconductor material suitable for high voltage, high temperature and high power applications, making it an attractive choice for many design projects. The FQB10N60CTM is suitable for operation from -55 to 175 ℃ with a maximum junction temperature of 175℃.

The FQB10N60CTM is a N-channel MOSFET, with a maximum drain current rating of 33A. It has excellent reverse recovery time of 1.4 ns (15 V) and a maximum sustained gate voltage rating of 20V. This MOSFET also has an excellent dv/dt (di/dt) capability up to 1.2 V/ns (1 A/ns).

The FQB10N60CTM provides a fast and efficient solution to a variety of switching applications, both analog and digital, with a very low on-resistance (<0.49 ohm @ 10V) and a low gate capacitance (6.8 nF @ 10V).

As with all MOSFETs, the FQB10N60CTM works by modulating the voltage applied to the gate terminal. When a gate voltage is applied to the N-channel MOSFET, a "channel" is formed between the source and the drain and a current flows through the device. The voltage applied to the gate determines the size of the channel and therefore the amount of current that flows through the device. This makes it an ideal device for controlling current in any type of switching circuitry.

The FQB10N60CTM has many applications including power switching, motor control, general purpose switching, and analog switching among others. It can also be used in high-frequency circuits, where its low on-resistance and low gate capacitance can help to reduce switching losses. The fast switching speed and high current capabilities of the FQB10N60CTM make it well-suited to many switching applications.

In addition, the MOSFET has an extremely low thermal resistance (<0.08 °C/W) which makes it suitable for high-power applications. This feature also makes the FQB10N60CTM a suitable choice for parallel switching applications, where the low thermal resistance helps to ensure that all the devices remain at the same temperature.

In conclusion, the FQB10N60CTM is a high voltage, high speed and fast switching MOSFET suitable for a variety of switching applications. Its low on-resistance, low gate capacitance and fast switching speed make it ideal for power switching, analog and digital switching, high frequency circuits and more. Its low thermal resistance helps to ensure that all devices remain at the same temperature when switching in parallel, making it an excellent choice for many applications.

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