Allicdata Part #: | FQB1P50TMTR-ND |
Manufacturer Part#: |
FQB1P50TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 500V 1.5A D2PAK |
More Detail: | P-Channel 500V 1.5A (Tc) 3.13W (Ta), 63W (Tc) Surf... |
DataSheet: | FQB1P50TM Datasheet/PDF |
Quantity: | 3200 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 63W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 10.5 Ohm @ 750mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FQB1P50TM is an enhancement mode power Field-Effect Transistor (FET). This MOSFET, produced by Fairchild Semiconductors, is a part of the FemtoFET range of FETs with ultra-low gate charge and low on-resistance. This FET employs the latest trench technology, along with molded gate and ultra-low gate charge. This device is best suited for high-end applications in power conversion systems requiring higher efficiency and low power losses. The FQB1P50TM FET offers an optimal balance between on-resistance and gate charge.
As with other FETs, the FQB1P50TM functions by using an electric field to control the shape and size of a field. The overall design of the FET creates a voltage-dependent channel, wherein a voltage produces a channel for electrons to flow through. This channel is established by creating a barrier between the source and the drain, which can be manipulated by adjusting the gate voltage.
The FQB1P50TM differs from other FETs in its application field, specifically in power conversion systems. In these applications, the FET is primarily used to switch power from one part of the circuit to another. This is achieved by adjusting the gate voltage, and thus the electron flow. In addition, the low on-resistance of the FET reduces power losses, increasing the overall efficiency of the power conversion system.
The FQB1P50TM offers many benefits which make it a desirable choice for high-end power conversion applications. These benefits include the low on-resistance, which reduces power losses, and the ultra-low gate charge which allows for efficient switching. Additionally, the FET’s trench technology enhances the overall stability of the device by reducing switching losses. Finally, the FET’s molded gate ensures that the device operates without any disturbances.
The FQB1P50TM is a robust, high-performance FET designed for high-end power conversion applications. With its low on-resistance, ultra-low gate charge, and trench technology, the FQB1P50TM offers an optimal balance between performance and efficiency in power conversion systems. The device is an excellent choice for applications in consumer electronics and industrial systems where low power losses are desired for higher system efficiency.
The specific data is subject to PDF, and the above content is for reference
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