FQB19N10LTM

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FQB19N10LTM is a MOSFET with the highest current-handling capability in the FQB19 series of MOSFETs. It has matched P-channel and N-channel MOSFETs with a high-current, low impedance design and advanced thermal design. This product is used in applications such as switching, rectification, and other high-voltage power control.

The main application fields of FQB19N10LTM include switching power supplies, industrial power control, automotive LED lighting, and high-current power supply for network communications. It also has applications in various fields such as consumer electronics, connected home, cloud services, automotive, motors and solenoids.

Working principle:

FQB19N10LTM is a MOSFET with an N-channel high voltage power MOSFET. In typical MOSFETs, when the gate voltage (Vg) is lower than the source voltage (Vsrc), the drain current is zero. On the other hand, when the gate voltage is higher than the source voltage, the switch is turned on and the drain current flows.

When the MOSFET is turned on, the P-channel current is controlled by the transistor\'s on- state voltage (Vds). This voltage is the difference between the drain and the source voltages, and it determines the amount of current flowing through the device. The on-state voltage is also known as the forward drop of the transistor.

The MOSFET is also protected against thermal runaway by a special heat-sink design and a built-in thermal protection circuit. The heat-sink design ensures that the temperature of the MOSFET does not exceed the maximum temperature rating of the device, and the thermal protection circuit ensures that excessive power dissipation does not cause the transistor to overheat.

The MOSFET also features an electrostatic discharge (ESD) protection circuit which ensures that the device is protected against short-term spikes in voltage. This helps to protect the device from damage caused by electrostatic discharge or other external disturbance.

The MOSFET is also designed with an advanced high-side floating gate, which reduces the chance of gate connection imbalance, thus improving the accuracy and performance of the device. This reduces gate switching delays and gate resistance, which translates into faster switching speeds and higher efficiency.

Finally, the MOSFET also has an integrated soft start circuit which provides a smooth and safe start up of the power stage. This reduces inrush current and prevents damage to sensitive components.

In summary, FQB19N10LTM is a high-current, low impedance MOSFET with a high-side floating gate and integrated soft start circuit. It is designed for use in applications such as switching, rectification, and other high-voltage power control and is protected against thermal runaway and electrostatic discharge. This product is used in various applications such as switching power supplies, industrial power control, automotive LED lighting, and high-current power supply for network communications.

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