FQB10N50CFTM-WS Allicdata Electronics
Allicdata Part #:

FQB10N50CFTM-WSTR-ND

Manufacturer Part#:

FQB10N50CFTM-WS

Price: $ 1.24
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 10A DPAK
More Detail: N-Channel 500V 10A (Tc) 143W (Tc) Surface Mount D²...
DataSheet: FQB10N50CFTM-WS datasheetFQB10N50CFTM-WS Datasheet/PDF
Quantity: 800
800 +: $ 1.12559
Stock 800Can Ship Immediately
$ 1.24
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 143W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: FRFET®, QFET™
Rds On (Max) @ Id, Vgs: 610 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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FQB10N50CFTM-WS transistors are a family of N-channel, low voltage, high dV/dt, and high-speed power field effect transistors (FETs). They are built using very low-Vth (threshold voltage) process technology and have a very low gate charge. This makes them ideal for high-efficiency switching applications such as power switching, synchronous rectifier, power factor correction, and gate-drive circuits that require high speeds, low output capacitance and good current handling capability.

N-Channel FQN10N50CFTM-WS transistors are used for a variety of applications, especially those that may require high switching speeds, such as DC/DC converters, pulse generators, motor drives and switching regulators. They are also found in many other modern electronic devices such as smartphones, tablets, laptops and other portable electronic devices.

FQN10N50CFTM-WS transistors use a design that allows them to operate at higher currents compared to most other FETs. Their maximum current carrying capacity is approximately 2 times higher than similar devices. The maximum power dissipation of the FQN10N50CFTM-WS transistor is 40 watts and the continuous operating temperature is -55C to +150C.

FQN10N50CFTM-WS transistors are a type of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). Unlike BJT transistors, MOSFETS use an insulated gate electrode that does not require current flow to function, allowing them to be used for applications requiring a larger input voltage swing. This makes them an excellent choice for high-frequency switching, as their excellent switching speeds make them ideal for high-speed circuits in data communications and digital processing.

The working principle of FQN10N50CFTM-WS transistors involves controlling the flow of current through the device using an electric field with the gate terminal. When the gate terminal is connected to a positive voltage, the electric field creates a channel between the source and drain, allowing a direct current (DC) to pass. When the gate terminal is connected to a negative voltage, the electric field reduces or blocks the current flow, turning off the transistor.

When the transistor is used for power switching applications, a controlled electric field is applied to the gate to control the amount of current that passes through the channel. As the gate voltage increases, the channel is widened, allowing more current to flow. As the gate voltage decreases, the channel is narrowed, restricting the amount of current that can pass through the channel. This enables the transistor to switch quickly between the on and off states, allowing for fast switching speeds.

In applications where a large current is drawn from the FQN10N50CFTM-WS transistor, it is necessary to use an additional gate driver circuit to safely control the voltage applied to the gate. This provides additional protection against current overload and helps ensure the device operates at optimal performance.

In summary, the FQN10N50CFTM-WS transistor is a type of N-channel, high-performance power field effect transistor that is used in various applications requiring high speeds and low output capacitance. It uses a very low-Vth process technology and has a very low gate charge, making it an ideal choice for power switching and other applications that require fast switching speeds. Additionally, the device offers excellent current carrying capacity, making it suitable for applications where a large current needs to be drawn.

The specific data is subject to PDF, and the above content is for reference

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