FQB12P20TM

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The FQB12P20TM is a combined high voltage, fast switching, and low on-resistance N-channel Power MOSFET. It is typically used in synchronous converters and DC - DC converters, as well as many other applications.

The FQB12P20TM is a single-channel, enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). In essence, FETs are controlled switches, using the field effect to control a channel between the drain and the source. In an enhancement-mode FET, the gate-source voltage (Vgs) must be greater than 0V for the channel to be conductive.

The FQB12P20TM MOSFET has an optimal working voltage of 600V and its maximum drain-source voltage is 1200V, making it ideal for high voltage switching applications. It also has a low on-resistance of 0.012Ω, achieving very low power dissipation and minimal power loss.

The FQB12P20TM is used in many power management applications, such as synchronous converters and DC - DC converters. It can also be used for switching and power amplifier applications. It is also suitable for use in applications that require high voltage and high speed switching, such as lighting and motor control.

The FQB12P20TM’s low on-resistance and power dissipation capabilities allow it to be used in high current applications, such as motors and other high power switches. Since its standard package is an TO-220, it is also suitable for use in many laboratory applications.

The FQB12P20TM is a powerful and reliable power MOSFET. Its low on-resistance and high voltage ratings make it ideal for a wide range of power management applications, from synchronous converters to motor controls. With its TO-220 package and high accessibility, it is also a popular choice for many laboratory applications.

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