FQB11P06TM Allicdata Electronics
Allicdata Part #:

FQB11P06TMTR-ND

Manufacturer Part#:

FQB11P06TM

Price: $ 0.53
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 60V 11.4A D2PAK
More Detail: P-Channel 60V 11.4A (Tc) 3.13W (Ta), 53W (Tc) Surf...
DataSheet: FQB11P06TM datasheetFQB11P06TM Datasheet/PDF
Quantity: 800
1 +: $ 0.53000
10 +: $ 0.51410
100 +: $ 0.50350
1000 +: $ 0.49290
10000 +: $ 0.47700
Stock 800Can Ship Immediately
$ 0.53
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.13W (Ta), 53W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 175 mOhm @ 5.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQB11P06TM is a silicon field-effect transistor (FET) device with an extremely low on-resistance and high power-handling capability. It is able to provide a great deal of control on high-speed switching applications where size and power consumption are key factors. This FET is often used in high-transistor-switch applications in industries such as automotive, computer, and communications.

In automotive related applications, FQB11P06TM is often used to control high-power circuits and switch large current loads. It is able to very accurately control the voltage drop across it so that it can be used to switch on and off, or rapidly switch on and off, any device with a power requirement up to its rated power. For example, it is often used as a switch for motor control, fuel injectors, and other high-powered components.

In the computer-related industry, FQB11P06TM is often used in ultra-low-power devices such as notebook PCs. Because of its low on-resistance, it is able to reduce the amount of power necessary to drive the device and maintain a gentle switching behavior when switching between devices. It is also used in power-line monitoring systems, and can provide a reliable way to accurately measure and monitor power-line conditions and provide feedback about power-sensitive devices such as solid-state relays.

The working principle of the FQB11P06TM is based on a voltage-controlled field effect transistor. When a voltage is applied to the gate terminal of the device, it controls the amount of current travelling through the channel by limiting or allowing current to pass depending on the current coming from the gate terminal. The FQB11P06TM has two types of control: low and high side switching, which can be reversed by inverting the voltage applied to the gate terminal. This reversibility makes it ideal for high-speed switching applications by providing a great degree of control over the power transistors used in a wide range of applications.

Overall, the FQB11P06TM is an incredibly useful field-effect transistor device, able to provide an extremely low on-resistance and high power-handling capability. With its great degree of control over power transistors and its ultra-low-power capabilities, it is ideal for high-speed switching applications in a variety of industries, such as in automotive, computer, and communications.

The specific data is subject to PDF, and the above content is for reference

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