Allicdata Part #: | HAT2092R-EL-E-ND |
Manufacturer Part#: |
HAT2092R-EL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET 2N-CH 30V 11A 8-SOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 11A 3W Surface... |
DataSheet: | HAT2092R-EL-E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 11A |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 10V |
Power - Max: | 3W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
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The HAT2092R-EL-E is an integrated circuit (IC) designed particularly for use in system power stages.
As a power stage, it is a type of specialized high voltage transistor device that is used to amplify or switch the power supply to an electrical circuit. The device is also widely used for short-term power switching applications. It is used for various purposes such as to start and stop motors, control heating elements, and to switch relays and solenoids.
In the power stage application, the HAT2092R-EL-E can provide up to 20V and 6A continuous drive current with an impedance of 15KΩ. The device operates with a rating of two-quadrant logic, which reduces power dissipation and power losses. It is a non-isolated device that requires external protection diodes for proper operation.
The HAT2092R-EL-E is a robust and efficient power stage device based on the Field Effect Transistor (FET) technology. It consists of an array of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) that are fabricated using an advanced CMOS (Complementary Metal Oxide Semiconductor) process.
The MOSFETs in the array work in a matrix-like configuration, and are connected in parallel to achieve the desired output power. They are controlled by the bi-directional control pins that allow for switching of loads between positive and negative voltage rails with an input source of 20V.
In addition, designing features include an on-state resistance of 5Ω and a maximum off-state leakage current of 0.1mA. Moreover, these features ensure fast switching times, low power loss, and high immunity from interference.
Furthermore, the device also features gate-to-source protection mechanisms that protect it from short circuit events, thermal runaway, and any other over-current or over-voltage conditions.
The HAT2092R-EL-E is suitable for a wide range of applications such as industrial automation, military, medical, and communication fields. Within these fields it can be used to control motors, power supplies, switch power loads in circuit, and can be used in switching logic applications.
In conclusion, the HAT2092R-EL-E is an integrated circuit that possesses Field Effect Transistor (FET) technology and Array of MOSFETs, providing an efficient and robust design solution for powering a variety of applications. It is suitable for use in system power stages and features superior features such as fast switching times, low power loss, and high immunity from interference.
The specific data is subject to PDF, and the above content is for reference
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