HAT2171H-EL-E

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The HAT2171H-EL-E is a single-channel Field Effect Transistor (FET) that provides increased power efficiency and improved reliability compared to other variants. The device is most commonly used in small, low power applications such as radio communication, military and automotive electronics. It is a programmable, radio frequency and screening-proven device with a very low on-resistance and low gate charge.

The HAT2171H-EL-E consists of three pins labeled Gate, Drain and Source. The device works by providing a channel of electrical conduction between the source and the drain when a voltage applied to the gate exceeds the threshold voltage. This in turn allows the current to flow between these two pins, creating a voltage drop across the channel.

The HAT2171H-EL-E is also engineered to be used in combination with an external field effect diode. This diode helps to protect the device against reverse voltage fluctuations and helps to prevent device failure in certain situations. The device is also hermetically sealed to prevent corrosion and protect against external environmental factors.

The HAT2171H-EL-E is ideal for use in applications that require precision timing, such as the control of temperature in domestic appliances or other consumer electronics. The device is also suitable for use in power circuitry and can be used to create complex logic gates in digital logic applications. It is also well suited for high power switching applications and can also be used for RF applications such as mobile phone base station transmitters.

In terms of its physical characteristics, the HAT2171H-EL-E has a small form factor, with a casing that measures just 14.5mm by 6.6mm. The total power dissipation is rated at 1.2 watts, while the on-resistance is rated at 0.032 ohms. The voltage rating is also impressive, rated at 55 volts with a surge rating up to 80 volts. The forward gate current is just 0.2 milliamp.

The maximum gate-source voltage is set at 20 volts, while the maximum drain-source voltage is set at 60 volts. The device’s junction temperature can reach up to 200 degrees Celsius. Finally, the device has an operating temperature range of -55C to 175C.

In summary, the HAT2171H-EL-E is an excellent choice for applications that require the best power efficiency and reliability. It has a small form factor, a low on-resistance and a very low gate charge. It is hermetically sealed to offer excellent environmental protection, and its maximum junction temperature is impressive. It also has an excellent voltage rating and an operating temperature range that suits a variety of applications.

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