Allicdata Part #: | HAT2170H-EL-E-ND |
Manufacturer Part#: |
HAT2170H-EL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 40V 45A LFPAK |
More Detail: | N-Channel 40V 45A (Ta) 30W (Tc) Surface Mount LFPA... |
DataSheet: | HAT2170H-EL-E Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | SC-100, SOT-669 |
Supplier Device Package: | LFPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4650pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 22.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 7V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 45A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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HAT2170H-EL-E is a type of single high voltage crossed N-channel Mosfet (Insulated Gate Bipolar Transistor - IGBT) with a maximum voltage of 170V. It is mainly used in high-power switching applications, such as industrial power supplies, high power inverter systems, automotive applications, and efficient lighting.
For any Mosfet, switching performance is the key factor. The HAT2170H-EL-E has lower turn on losses than standard low voltage N-channel Mosfets and is capable of switching at high frequencies without saturation.
The main advantage of using this type of Mosfet is that it has a low on resistance (Ron) which helps to minimize conduction losses and provides a low voltage drop during operation. The on resistance of the HAT2170H-EL-E is 0.0017Ω@8A, which is lower than that of other standard low voltage N-channel Mosfets.
The device is also designed for low thermal resistance, which helps to minimize junction temperatures with increased heat dissipated from the device. It also has an on resistance that remains nearly constant from -40°C to +125°C.
The device works using the principle of voltage-controlled capacitance. When a voltage is applied across the gate-source terminals, the electrical charge stored in the gate region of the Mosfet is increased, thereby increasing the width of the conducting channel between the source and drain terminals and allowing electric current to flow between them. This electric current flowing through the device is controlled by the applied gate voltage.
The HAT2170H-EL-E is also designed to provide protection against electrostatic discharge (ESD) with its built-in body diode. This helps to protect the gate of the Mosfet from unwanted external ESD pulses, which could damage or destroy the device.
The device is highly reliable due to the imbalanced distribution of the P-N junction, which helps to reduce the probability of negative bias temperature instability and gate oxide breakdown.
Overall, the HAT2170H-EL-E is an excellent choice for high power applications due to its low on-resistance, high frequency switching capability, low thermal resistance, ESD protection and reliability. It is ideal for high power inverter, and motor drive applications due to its ability to handle high load current without saturation.
The specific data is subject to PDF, and the above content is for reference
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