HAT2131R-EL-E

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The HAT2131R-EL-E, FET is a branded N-channel MOSFET from the Vishay Intertechnology, Inc. This compact and surface-mountable FET is a reliable device for high-frequency operation, allowing for efficient power switch control applications. It features an optimized ESD protection with an on-resistance rating of 8 mΩ. It also has a very low gate charge as well as a fast switching speed, a wide-operating temperature range of -55 °C to 150 °C and transverse mount capabilities.

In order to understand the HAT2131R-EL-E’s application field, we need to understand its working principle first. MOSFETs are a type of field effect transistor, or FET, which use the electric field between a terminal gate and the channel to regulate the flow of electrons between the source and drain. This arrangement results in a very tight control over the flow of electric current, meaning that the current can be easily adjusted by simply changing the voltage applied to the gate.

As for the actual workings of the HAT2131R-EL-E, the metal-oxide semiconductor (MOS) technology used in the construction of this FET means the gate is insulated from the source and drain similarly to an insulated gate bi-polar transistor, or IGBT. This effectively allows the device to act as two transistors in parallel, each with their own on/off switch, allowing a higher amount of current to be processed through the device, achieving lower on-resistance ratings than can be achieved with a traditional transistor.

In terms of application fields, the HAT2131R-EL-E can be used in a variety of power switch control applications. Its superior design allows for higher current limit and lower on-resistance ratings as well as a wide operating temperature range. This makes it suitable for applications such as motor control, relays, light switches, and other regulation applications that require lower on-resistance ratings and increased current capabilities. These benefits combined make the HAT2131R-EL-E an ideal choice for these applications.

In addition to its application in power switch control, the HAT2131R-EL-E is also widely used in mobile devices such as smartphones and tablets, due to its low gate charge rating and fast switching speed. This makes it suitable for applications such as audio amplifier regulation and digital logic control, allowing for more efficient power management in such devices.

Another field where the HAT2131R-EL-E can be used is in consumer electronics such as TVs, DVD players, and similar appliances. This MOSFET’s superior design has enabled more efficient voltage and current regulation, meaning that more power can be transferred and applied to these devices, effectively leading to less power consumption and reduced heat production.

Finally, the HAT2131R-EL-E also finds use in automotive applications. Its transverse mount capabilities and wide operating temperature range make it suitable for use in energy storage devices, allowing for faster power transfer for starting and acceleration applications.

In conclusion, the HAT2131R-EL-E is a reliable and efficient N-channel MOSFET from Vishay Intertechnology, Inc. Its modest size and superior design make it suitable for a variety of power switch control applications including motor control, relays, light switches, digital logic control, consumer electronics, and automotive applications. This makes this FET a reliable choice for its various application fields, allowing for efficient and higher current transfer where its properties are needed.

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