HAT2116H-EL-E

Vgs(th) (Max) @ Id:	--
Package / Case:	SC-100, SOT-669
Supplier Device Package:	LFPAK
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	15W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1650pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	26nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	8.2 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	30A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The HAT2116H-EL-E is a single MOSFET (metal–oxide–semiconductor field-effect transistor) used widely in a variety of applications and settings. MOSFETs are widely used as power switches in motor control and other different applications. MOSFETs are semiconductor devices that can be turned on and off, allowing their operation as amplifiers, switches, or volt regulators. The particular advantages of using MOSFETs in these devices include the ability to switch at high frequencies, low off-state power losses, and their ability to efficiently switch low-voltage signals. The HAT2116H-EL-E is a high current single N-Channel MOSFET with an on-resistance of 48mΩ (maximum) at 20V. It is designed to provide both low on-state resistance and high rated drain current (1.25A). This makes the HAT2116H-EL-E ideal for motor control and other applications where high-current switching is required. The MOSFET has a very low input capacitance of 9nF, which makes it suitable for use as a fast switching device in digital circuits. The low input capacitance also makes the HAT2116H-EL-E well-suited for power switching applications where the switching speed is critical.The working principle of the HAT2116H-EL-E is based on a basic MOSFET design. A MOSFET is essentially a three-terminal device consisting of a source, a drain, and a gate. The source is the positive side of the device, while the drain is the negative side. The gate is responsible for controlling the flow of current between the two terminals. The gate voltage controls the conductivity of the MOSFET and the amount of current that can flow through it. When a voltage is applied to the gate, the MOSFET will allow the flow of current between the source and the drain. When the voltage is removed from the gate, the current flow will be blocked.As with all MOSFETs, the characteristics of the HAT2116H-EL-E are determined by the characteristics of the transistor. The main performance characteristics of the HAT2116H-EL-E are on-resistance, charge storage capacitance, breakdown voltage, and maximum current and power ratings. In order to ensure correct operation of the device, these parameters must be taken into account when designing the circuit. The on-resistance of the HAT2116H-EL-E is 48mΩ (maximum) at 20V, which is relatively low for a device of this size. The charge storage capacitance is 9nF, which is also relatively low and allows the device to switch quickly. The breakdown voltage is 30V and the maximum continuous current rating is 1.25A, with a maximum power rating of 25W.The HAT2116H-EL-E MOSFET is used in a variety of applications, most commonly as a power switch in motor control. It is also used in power cycling and other applications where high-current switching is required. The good efficiency and low capacitance of the device make it suitable for use in digital circuits, allowing for fast switching speeds. The good on-resistance and maximum power ratings also make it suitable for use in a wide range of power switching applications. Overall, the HAT2116H-EL-E MOSFET is an excellent device for use in a variety of applications and settings. Its low on-resistance, low input capacitance, and high ratings make it ideal for use as a power and signal switch in a wide range of applications. The device is also well-suited for digital circuits due to its fast switching speed and low capacitance.

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