HAT2166H-EL-E Discrete Semiconductor Products |
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Allicdata Part #: | HAT2166H-EL-ETR-ND |
Manufacturer Part#: |
HAT2166H-EL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 30V 45A LFPAK |
More Detail: | N-Channel 30V 45A (Ta) 25W (Tc) Surface Mount LFPA... |
DataSheet: | HAT2166H-EL-E Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | SC-100, SOT-669 |
Supplier Device Package: | LFPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4400pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.8 mOhm @ 22.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 45A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The HAT2166H-EL-E is a single N-channel power MOSFET designed with cutting-edge, 0.20-micron trench technology. It is offered in a moderate voltage range with a low operating voltage and low DC resistance. The HAT2166H-EL-E MOSFET is suitable for a variety of applications including power management, switching and linear power conversion.
Application Fields
The HAT2166H-EL-E is primarily used as an ultra-low RDS(on) switch in power supplies and power converters. It is well-suited for applications such as diode emulation, layering and share-efficiency improvement. The device also has good linear characteristics, making it suitable for audio power amplifiers and power management switching.
The HAT2166H-EL-E is ideally suited for power management applications such as switching power supplies, system level power management, and general purpose switching. In addition, its low on-resistance characteristics make it suitable for high frequency power converters, class D amplifiers, load switch for hot plugging, automotive load switching and driving high-side/low-side switches. The device also can be used for battery protection and monitoring applications.
Working Principle
The HAT2166H-EL-E MOSFET functions as an electronically controlled switch that is used to turn devices or entire circuits on or off. It consists of two regions: the source and the drain. A voltage applied between the two terminals creates an electric field that causes electrons to flow through the device. This, in turn, conducts current across the two terminals. The device can be in either an "on" or "off" state, depending on the voltage applied to the terminal.
When the voltage applied to the HAT2166H-EL-E MOSFET gate is greater than the voltage in the source, the channel between the source and the drain is opened, allowing electrons to flow through and the device is in its "on" state. When the source voltage exceeds the gate voltage, the channel is closed and the device is in its "off" state. The overall amount of current that can flow through the device is determined by the voltage applied and the type of device.
The HAT2166H-EL-E MOSFET has low on-resistance with a fast switching speed, which allows it to be used in many applications, such as power management, switching and linear power conversion. With its unique design and features, the HAT2166H-EL-E is a great choice for many power management applications.
The specific data is subject to PDF, and the above content is for reference
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