Allicdata Part #: | HAT2267H-EL-E-ND |
Manufacturer Part#: |
HAT2267H-EL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 80V 25A 5LFPAK |
More Detail: | N-Channel 80V 25A (Ta) 25W (Tc) Surface Mount LFPA... |
DataSheet: | HAT2267H-EL-E Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | SC-100, SOT-669 |
Supplier Device Package: | LFPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2150pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 12.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Ta) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The HAT2267H-EL-E is a single, high-performance N-Channel Field Effect Transistor (FET) device, designed for high power and wide frequency applications. HAT2267H-EL-E is extremely robust, providing high input impedance and constant current over a wide range of power levels. Being one of the most popular FETs for low-power applications, HAT2267H-EL-E is designed to enable superior performance in a variety of applications.
Applications of HAT2267H-EL-E include high power switch mode power supplies, audio amplifiers, linear regulators and low-level switching. It is also used in a variety of other applications that require high performance, robustness and stability, such as lighting, motor control, and home appliances. In addition, HAT2267H-EL-E has a very low on-state resistance, which increases the efficiency of the device in switching applications.
The working principle of the HAT2267H-EL-E can be best understood by considering the general operation of a MOSFET. A MOSFET device works by controlling the amount of current passed through an external circuit. When a suitable gate voltage is applied to the gate of the MOSFET, a potential difference is formed between the source and drain junctions. When the potential difference is large enough, current begins to flow through the channel, between the source and the drain. This current is then used to drive external circuits.
Specifically, in the case of the HAT2267H-EL-E, it is an N-channel FET, which means that when a positive voltage is applied to the gate, current will flow from the drain to the source. This type of field effect transistor is known as an enhancement-mode device and is often used in high-performance applications due to its excellent switching speeds and low on-state resistance. They are also capable of delivering large currents over a wide range of power levels.
In addition, the HAT2267H-EL-E also features excellent reliability and temperature performance, making them suitable for high-power applications in demanding environments. The maximum drain current for this device is 3A, with a maximum drain source voltage of 20V, making them capable of delivering significant power levels. It also features a very low input capacitance, which can be useful in switching applications.
Overall, the HAT2267H-EL-E is an excellent choice for a wide range of applications including high-power switch mode power supplies, audio amplifiers, linear regulators and low-level switching. Its excellent performance, low on-state resistance, and high power capabilities make it an excellent choice for high-performance and robust applications. Its temperature and reliability performance also makes it suitable for use in a wide range of environments.
The specific data is subject to PDF, and the above content is for reference
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