HAT2287WP-EL-E Allicdata Electronics
Allicdata Part #:

HAT2287WP-EL-E-ND

Manufacturer Part#:

HAT2287WP-EL-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH WPAK
More Detail: N-Channel 200V 17A (Ta) 30W (Tc) Surface Mount 8-W...
DataSheet: HAT2287WP-EL-E datasheetHAT2287WP-EL-E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WPAK
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 94 mOhm @ 8.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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HAT2287WP-EL-E is a high-power high-speed insulated gate bipolar transistor (IGBT) designed to operate in medium voltage applications. It is a high-voltage, high-current solid-state switch that is used for applications such as motor drives, lighting, solar inverters, and uninterruptible power supplies (UPS). The device is capable of handling power ratings from 2 to 5kW and is suitable for use in Switched Mode Power Supplies (SMPS).

Application Field of HAT2287WP-EL-E

The HAT2287WP-EL-E is a versatile IGBT designed for a wide range of applications. It is used in high-energy systems such as UPS, motor drives, and lighting systems. Its high voltage rating makes it suitable for use in solar inverters, welding systems, redundant power systems, and UPS systems. The device is widely used in a variety of industrial and domestic applications including home appliance control, retractable doors, lifting motors, and motor controllers.

The device is also suitable for other applications such as snubber circuits, DC-DC converters, and motor control systems. The wide range of current ratings available makes the device ideal for use in applications that require high-frequency operation.

Working Principle of HAT2287WP-EL-E

The HAT2287WP-EL-E is an insulated gate bipolar transistor (IGBT) that consists of two switching elements—the IGBT and the diode. The device is designed to operate at medium voltage and current levels. The IGBT is a power transistor that functions as a metal-oxide semiconductor field-effect transistor (MOSFET). It is connected between the gate and source, and this connection allows the device to control the voltage and current flow through the device.

The IGBT also has a gate controlled protection circuit, which can protect the device against excessive current, overheating, and overvoltage. The diode part of the device helps to protect the IGBT against reverse polarity. This will prevent the switch from being damaged due to backflow or excessive current.

The HAT2287WP-EL-E is an efficient and reliable switch for medium-voltage applications. The device can handle power ratings from 2 to 5kW and has a wide range of current ratings available. It is suitable for use in various industrial and domestic applications and is capable of handling power ratings from 2 to 5kW. The device is capable of performing with high frequency operation.

The specific data is subject to PDF, and the above content is for reference

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