HAT2088R-EL-E

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The HAT2088R-EL-E is a low on-resistance MOSFET device specifically designed for automotive and industrial applications. The HAT2088R series features a high-current, low-voltage, inverse breakdown voltage of 100V and a maximum on-resistance of 0.216Ω. The HAT2088R-EL-E device is a single, enhancement-mode MOSFET in a TO-220-like package. This device is capable of seamlessly operating at high frequency, resulting in improved efficiency and very low switching losses. The device is also equipped with an intelligent thermal protection system which improves system reliability and limits the risk of unexpected failure.

The HAT2088R-EL-E MOSFET is designed to reduce EMI emissions, conserve power, enhance productivity, improve system uptime and reduce operational costs in automotive and industrial applications. Automotive applications include motor drivers, power supplies, converters and inverters. Industrial applications include medical equipment, industrial motors, switches, HVAC and other power and energy related applications. As a high-current, low-voltage MOSFET device, the HAT2088R-EL-E device is capable of providing superior performance in these applications. The device features an inverse breakdown voltage of 100V and a maximum on-resistance of 0.216Ω. This device is ideal for high-efficiency, high-frequency power conversion applications as it can operate seamlessly at high-frequencies.

The HAT2088R-EL-E MOSFET device’s working principle is based on the basic operation of a MOSFET transistor. It is a voltage controlled device with three terminals: gate, drain, and source. The gate terminal is used to control the flow of current through the device by applying a voltage to the gate terminal. When the gate is at zero volts, the device is off and no current flows through it. When a positive voltage is applied to the gate, the channel between the source and drain is opened and current is allowed to flow. The amount of current flowing through the device is directly proportional to the gate voltage applied to the device.

The HAT2088R-EL-E MOSFET device also features a built-in intelligent thermal protection system which protect the device from over-temperature conditions and improve system reliability and reduce the risk of unexpected failures. This device is also capable of providing superior performance in EMI-sensitive applications as it features a lower capacitance, lower gate-source capacitance, and a consequent reduction in switching losses than other similar MOSFET devices. This device is also equipped with an on-chip level-shift diode which offers voltage clamping and over-voltage protection. This feature is especially beneficial in high voltage applications.

The HAT2088R-EL-E MOSFET device is ideal for high-efficiency, high-frequency power conversion applications, due to its high current, low voltage, inverse breakdown voltage of 100V and its maximum on-resistance of 0.216Ω. This device also offers superior performance in EMI-sensitive applications and its built-in intelligent thermal protection system and diode level-shift feature provide enhanced system reliability and over-voltage protection. This device is specifically designed for automotive, medical and industrial applications. This device is capable of providing superior performance in these applications and is an ideal choice for high-frequency and high-efficiency power conversion applications.

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