Allicdata Part #: | HAT2096H-EL-E-ND |
Manufacturer Part#: |
HAT2096H-EL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 30V 40A LFPAK |
More Detail: | N-Channel 30V 40A (Ta) 20W (Tc) Surface Mount LFPA... |
DataSheet: | HAT2096H-EL-E Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | SC-100, SOT-669 |
Supplier Device Package: | LFPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5.3 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The HAT2096H-EL-E is a type of short-channel, high-efficiency N-Channel enhancement mode MOSFET (metal-oxide-semiconductor field-effect transistor). It is a single device consisting of the integrated gate and drain regions typically used in discretes and other semiconductor components. Commonly used in low voltage applications such as cell phones, tablets and other portable devices, the HAT2096H-EL-E is an ideal choice for interior and/or power switching, current circuits and load switching.
The HAT2096H-EL-E has an electrostatic voltage rating of 25V, a thermal resistance of 3.3 ohm-in2/W and an output current capability of 0.6A on average. This makes the device more efficient when compared to other FETs, allowing it to perform better in compact, energy- consuming devices. It\'s made of a metal oxide semiconductor and comes in a variety of forms, including a D2PAK package, which makes it easy to mount and also increases its reliability.
The HAT2096H-EL-E works by converting electrical current in an active gate, made of an oxide-semiconductor interface, into a number of small outputs. This makes it an ideal choice for switching devices that have low power requirements. As an N-channel device, it is able to switch between "active" and "inactive" states that are determined by voltage levels applied to the gate. The device will remain in the inactive state until a given voltage level is reached. Once that level is reached, the HAT2096H-EL-E will switch to the active state and allow current to flow. Once the voltage is lowered to below the threshold, the device will switch back to the inactive state and cease current flow.
When compared to other FETs and MOSFETs, the HAT2096H-EL-E is an efficient and cost-effective choice for low voltage applications. Its durable construction and its electrostatic and thermal resistances make it an ideal choice for current circuits and load switching. While it is primarily used in cell phones and portable devices, it can also be used in a variety of other applications where a low power switch is needed.
The specific data is subject to PDF, and the above content is for reference
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