Allicdata Part #: | HAT2192WP-EL-E-ND |
Manufacturer Part#: |
HAT2192WP-EL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 250V 10A WPAK |
More Detail: | N-Channel 250V 10A (Ta) 25W (Tc) Surface Mount 8-W... |
DataSheet: | HAT2192WP-EL-E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 710pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 230 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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HAT2192WP-EL-E is a transistor from the FETs, MOSFETs and Single category. An FET, which is a field effect transistor, is a semiconductor device that uses electric fields to modify or control the conductivity of a semiconductor. There are two basic types of FETs--the junction FET and the metal oxide semiconductor FET (MOSFET). HAT2192WP-EL-E is a MOSFET. It has three terminals--a source, a drain and a gate--and is operated by applying a voltage to the gate to control the current that flows between the source and the drain.
HAT2192WP-EL-E is designed for a wide range of applications, particularly in the automotive, industrial and telecom markets. It offers superior performance in a variety of applications, making it an ideal choice for engineers seeking a versatile solution. It features advanced technology, high reliability and excellent electrical characteristics, making it suitable for a variety of power management in an increasingly diverse range of applications. It is suitable for applications such as battery charging, power supply for electronic equipment, lighting and motor control, as well as HVAC control.
In terms of its working principle, the HAT2192WP-EL-E operates on a similar principle as other FETs. It consists of a semiconductor channel between its source and drain, and when a voltage is applied to its gate, this channel increases or decreases in conductivity. This change in conductivity enables current to flow from the source to the drain. It also has a reverse-biased P+ diffusion region, which prevents current from flowing in the reverse direction.
HAT2192WP-EL-E also features Avalanche technology. This technology increases the breakdown voltage of the FET, making it suitable for use in high-voltage applications. As the applied voltage increases, more current can flow through the channel, resulting in increased power handling. Furthermore, the HAT2192WP-EL-E utilizes a higher voltage rating of 200V, making it suitable for applications where a higher voltage rating is required.
The HAT2192WP-EL-E is a versatile device that is suitable for a wide range of applications, making it an ideal choice for engineers. It features advanced technology and excellent electrical characteristics, as well as a higher voltage rating, making it suitable for a variety of power management in an increasingly diverse range of applications. This makes it a great choice for those seeking a reliable and versatile solution.
The specific data is subject to PDF, and the above content is for reference
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