HAT2175H-EL-E

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HAT2175H-EL-E is a N-Channel Enhancement Mode MOSFET. Many applications require MOSFETs that can achieve high efficiencies and low gate to drain capacitances. HAT2175H-EL-E meets these needs by providing a wide range of features. HAT2175H-EL-E is available in three drain current ratings; 20A, 30A and 40A.

The application fields of HAT2175H-EL-E covers power management, driver, DC/DC converters, switch mode power supply and distribution, as well as any other application which require high efficiency, low gate charge and low on-resistance.

The working principle of HAT2175H-EL-E involves the use of the MOSFET’s gate-source voltage to control the conduction across the drain and source terminals. The drain and source are protected against over-voltage and over-current conditions by the inherent parasitic diode, which is caused by the transistor\'s gate oxide layer. The drain-source resistance is reduced by the increase of the gate voltage and as the gate voltage is increased beyond the threshold voltage, the MOSFET achieves its highest efficiency.

HAT2175H-EL-E has low on-resistance which is a combination of the physical size and the bulk of the transistor. The lower drain-source resistance allows the MOSFET to draw less current during operation and it also reduces the gate charge. Since the on-resistance of the MOSFET is much lower than the off-state resistance, the power that is consumed is also low, therefore reducing the power consumption.This is especially useful when power management is required in the design.

HAT2175H-EL-E also has low gate to drain and gate to source capacitance. This minimizes the amount of parasitic capacitance between the gate and the drain and source, which in turn reduces switching losses and improves the efficiency.The lower gate to drain and gate to source capacitance also helps reduce the area taken up by the MOSFET and thereby reducing the total cost of design.

In conclusion, HAT2175H-EL-E is an excellent N-Channel Enhancement Mode MOSFET that offers many advantages to the user. It has high efficiency and provides low on-resistance and low gate charge. Furthermore, it has low gate to drain and gate to source capacitances that help reduce the size of the MOSFET, as well as reduce the power consumption. Therefore, HAT2175H-EL-E is an ideal choice for use in any application where power management, high efficiency and low on-resistance are all desired.

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