HAT2299WP-EL-E

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The HAT2299WP-EL-E is a single N–channel enhancement–mode Field Effect Transistor (FET). It is specially designed with advanced process technology using Trench MOSFET technology to provide better switching performance and low on–state resistance. This transistor is suitable for use in high–efficiency electronic switch applications.

Features

• Low On–state Resistance (RDS(on))
• Ultra–Low threshold Voltage
• Integrated 10V Bootstrap Diode
• Ni–Free Lead Finish
• Low Gate Charge
• Low Input Capacitance
• ESD Rated To JEDEC Stand

Application Fields

The HAT2299WP-EL-E transistor is suitable for use in a wide range of applications, including switch mode power supplies, high-frequency DC–DC converters, motor drives, and laptop power supplies. It is also suitable for telecommunication and computer systems, as well as in other high–frequency, high–efficiency electronic switch applications.

Working Principle

The HAT2299WP-EL-E transistor is an enhancement–mode Field Effect Transistor (FET). Enhancement–mode FETs are voltage–controlled devices in which the current flow is a function of the voltage difference between the gate and the source terminals. When the gate–to–source voltage (VGS) is zero, or negative (VGS<0), the transistor is in its "off" state, where the flow of current is practically zero. When the gate–to–source voltage is made positive (VGS>0), the transistor "opens", allowing current to flow from the drain to the source.

The current flowing from the drain to the source decreases with increasing gate–to–source voltage. This is due to the channel becoming increasingly resistive with increasing VGS, causing the channel\'s resistance (RDS(on)) to increase, and therefore reducing the current. The channel resistance for a given voltage is referred to as the On–State Resistance (RDS(on)).

For an FET to switch efficiently between the "on" and "off" states, it needs to be optimized in terms of its On–state Resistance. The HAT2299WP-EL-E transistor is designed with advanced process technology using Trench MOSFET technology to provide better switching performance and low on–state resistance (RDS(on)).

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