Allicdata Part #: | HAT2099H-EL-E-ND |
Manufacturer Part#: |
HAT2099H-EL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 30V 50A LFPAK |
More Detail: | N-Channel 30V 50A (Ta) 30W (Tc) Surface Mount LFPA... |
DataSheet: | HAT2099H-EL-E Datasheet/PDF |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | -- |
Package / Case: | SC-100, SOT-669 |
Supplier Device Package: | LFPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4750pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.7 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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Introduction
The HAT2099H-EL-E application field and working principle of the field effect transistor (FET) is an incredibly important topic to consider when designing electronic circuits. FETs are a type of transistor which operate by controlling the flow of electric current between the gate and the source terminal. FETs are used in a wide range of applications, such as amplifiers and digital logic circuits.In this article, we will look at the HAT2099H-EL-E FET and discuss its application field and working principle. We will look at how this particular FET works and what makes it unique. We will also discuss the benefits and disadvantages of using the FET in various situations.What is a HAT2099H-EL-E FET?
A HAT2099H-EL-E FET is an enhancement type field effect transistor (FET). It is a type of MOSFET which stands for Metal-Oxide Semiconductor Field-Effect Transistor. The “MOS” concept comes from the fact that the device consists of a metal gate electrode and two silicon dielectric layers (metal-oxide-semiconductor). The HAT2099H-EL-E has a Enhancement MOSFET structure, meaning that the FET is designed to operate with a higher source-drain voltage than an otherwise similar depletion-type FET. FETs are a type of three-terminal electrical device which can be used in both analog and digital applications. The basic structure of all FETs is the same; they consist of the source and drain pins, a gate electrode, and a dielectric (insulator) between the gate and source pins. The dielectric between the gate and the source pins determines how large the voltage drop is when the FET is on. In an enhancement-type FET, the insulation is thinner, allowing for a larger voltage drop when the FET is on.The HAT2099H-EL-E is a single, depletion-type FET, meaning that it operates by controlling the flow of electric current between the gate and the source terminal. This type of FET is appropriate for use in circuits that require high speed signal transfer, such as logic circuits and high speed switching circuits.HAT2099H-EL-E FET Application Field and Working Principle
FETs are often used in analog applications, such as amplifiers. The HAT2099H-EL-E FET can be used in a wide variety of analog and digital applications. The HAT2099H-EL-E can be used in power amplification circuits, voltage control circuits, and even in audio circuitry. The HAT2099H-EL-E is capable of dealing with high frequencies up to 200 KHZ.The HAT2099H works on the principle of a voltage-controlled transistor. This means that the gate voltage can be used to change the resistance between the source and the drain. The application of a gate voltage larger than the threshold voltage creates an inversion layer in the substrate, which in turn creates an increase in the current flow from the source to the drain.In addition to its high frequency performance, the HAT2099H-EL-E offers several other advantages. It has a low on-state resistance and can withstand high voltage and current. This makes it an ideal choice for high current applications, such as motor control circuits. It also has a low gate threshold voltage, meaning that it can be used in low voltage supply circuits.Conclusion
The HAT2099H-EL-E FET is a very versatile and powerful device. With its high on-state resistance, its high frequency performance, and its low gate threshold voltage, it can be used in a variety of applications, from power amplification circuits to logic circuits and even audio circuitry. Due to its low price and wide availability, the HAT2099H-EL-E is a great choice for a variety of applications.The specific data is subject to PDF, and the above content is for reference
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