HAT2173H-EL-E Discrete Semiconductor Products

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The HAT2173H-EL-E is a single MOSFET used in many modern electronic applications. It is widely used in a variety of applications, from controlling power in appliances to providing a switching method for microcontrollers in computers. This article explores its application field and working principle.

Application Field

MOSFETs have become the dominant device used in many applications. The HAT2173H-EL-E provides numerous advantages in that it can be used with low voltage and low current, yet switch high amount of power. Its low input capacitance and fast switching time make it ideal for use in systems that require high speed operations.The HAT2173H-EL-E is also well suited for a wide range of digital and analog applications. It can be used as an input buffer for an A/D converter, for example, in audio equipment. It is also used for power management in portable devices, controlling the current to LEDs, and in communication circuitry. Its low power dissipation makes it suitable for use in battery-operated devices as well. It can also be used as a switch, with its low on-resistance making it superb for driving inductive loads.Some of the common applications that the HAT2173H-EL-E can be found in include cellular phones, televisions, computers, gaming consoles, DVD players, navigation systems, and high-end audio systems.

Working Principle

The HAT2173H-EL-E has two important properties that define how it operates: its threshold voltage, and its drain-source on-state resistance. Both of these properties relate to how the MOSFET conducts from the drain to the source when the gate voltage is applied.When the gate voltage is below the threshold voltage, the HAT2173H-EL-E is said to be in its "off" state. In this state, the device is not conducting due to the lack of gate voltage. The threshold voltage is a DC value, and is typically in the range of 2 – 4V.When the gate voltage exceeds the threshold voltage, the HAT2173H-EL-E is in its "on" state. In this state, the device is conducting from the drain to the source. The device will operate at its optimum performance when the gate voltage to threshold voltage difference is greater than the specified gate-source voltage rating. As the gate-source voltage difference increases, the drain-source on-state resistance decreases, leading to increased current flow between the drain and the source.The use of the HAT2173H-EL-E usually requires that there is a pull-down device connected between the gate and the source of the MOSFET. This pull-down device is usually a resistor, and it holds the gate voltage at the threshold level when the MOSFET is not in use. When the MOSFET is in use, the pull-down device is bypassed, allowing the gate voltage to increase, thus turning the device "on".

Conclusion

The HAT2173H-EL-E is a single MOSFET with many advantages, making it ideal for a wide range of applications. It has a wide range of operation and is suitable for use in digital and analog applications. Its low input capacitance and fast switching time make it suitable for use in high speed systems. Its low power dissipation makes it suitable for use in battery-operated devices, while its low on-resistance makes it suitable for driving inductive loads. Its threshold voltage and on-state resistance are used to determine its state and function. The use of a pull-down device is usually necessary to ensure proper operation of the HAT2173H-EL-E.

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