HAT2279H-EL-E Discrete Semiconductor Products |
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Allicdata Part #: | HAT2279H-EL-ETR-ND |
Manufacturer Part#: |
HAT2279H-EL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 80V 30A 5LFPAK |
More Detail: | N-Channel 80V 30A (Ta) 25W (Tc) Surface Mount LFPA... |
DataSheet: | HAT2279H-EL-E Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | SC-100, SOT-669 |
Supplier Device Package: | LFPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3520pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Ta) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The HAT2279H-EL-E FET transistor is a specialized component that is designed for specific application fields. It is a single n-channel enhancement mode MOSFET with a current rating of up to 15A, and a voltage rating of up to 18V. The transistor is made from Trench MOSFET technology and is a heavily doped insulated-gate transistor. It offers optimum switch performance and is suited for high-current switching applications in which low on resistance and low gate control is critical.
The HAT2279H-EL-E transistor is mainly used in power routing applications where it can be used to switch a large current. It is also used in logic level switching applications, digital signal processing and mixed signal applications. Some of its specific application fields include pulse width modulators, motion control devices such as stepper motors, and power supplies.
The working principle of the HAT2279H-EL-E driver transistor is similar to that of any other n-channel MOSFET. It is based on the principle of negative resistance and the electrical characteristics of a metal-oxide-semiconductor field effect (MOSFET) transistor. In order for current to flow through the transistor’s drain-source channel, a voltage must be applied to the gate terminal. This voltage causes the channel to open, allowing current to flow through the drain-source path. This type of transistor is often used in logic level switching applications as it has very fast and low-voltage switching characteristics.
The HAT2279H-EL-E transistor also features a pin-for-pin compatible design with the popular MC14490, which makes it suitable for a wide range of applications. For example, it can be used in power supplies and active filters, as well as pulse modulators and voltage controllers. Additionally, it can be used as a switch in motor control circuits, digital signal processors, and switching applications such as remote control circuits.
The HAT2279H-EL-E transistor is a highly efficient switching device for various applications requiring low on-resistances and low gate control. Its advanced Trench MOSFET technology offers improved switch performance and better switching times compared to other MOSFET transistors. This is why it is used in high-current applications such as power supplies, motor controls, logic level switching, and various digital signal processors.
The specific data is subject to PDF, and the above content is for reference
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