HAT2164H-EL-E

Vgs(th) (Max) @ Id:	--
Package / Case:	SC-100, SOT-669
Supplier Device Package:	LFPAK
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	30W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7600pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	50nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	3.1 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	60A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The HAT2164H-EL-E is a type of field effect transistor (FET). FETs are transistors that rely on voltage to control the current flow from source to drain, instead of relying on the intensity of the current, as it is the case with the conventional field-effect transistor (BJT). FETs are more common and are used in a large number of electronic systems.The HAT2164H-EL-E is a single-channel, depletion-mode, insulated gate field-effect transistor. This device is also known as an IGFET. It is used to amplify and switch current signals in electronic devices such as audio amplifiers, digital to analog converters, and other digital and analog circuits.The HAT2164H-EL-E results in low power consumption due to its low voltage and high performance. This makes it suitable for battery-powered applications and makes it attractive for those interested in designing with low power consumption.The basic operation of the HAT2164H-EL-E is based on the principle of controlling the current through the device with a gate voltage. When a positive voltage is applied to the gate of the FET, the device is turned on and current will flow from the source to the drain through the channel. The current can be varied by changing the gate voltage. If the gate voltage is decreased, the current will decrease, and if the gate voltage is increased, the current will increase.The gate voltage can also be used to turn the device off, by applying a negative gate voltage which results in a depletion of the charge carriers in the channel and a decrease in the current flowing through it. This allows the device to be used as a switch, completely cutting off the current flow.The HAT2164H-EL-E has an operating temperature range of -55 to 125 degrees Celsius and is available in an 8-pin dual in-line package. It is a very efficient device and has low power consumption, low input capacitance, and low resistance between drain and source. It can handle continuous currents up to 2A and pulse currents up to 10A.It is also relatively easy to use and set up for most applications and can be used in combination with other system circuits. This makes it highly versatile and suitable for a large variety of applications.Overall, the HAT2164H-EL-E is a highly efficient FET that can be used in a wide variety of applications. Its low voltage operation makes it an attractive option for battery-powered applications and its low input capacitance and resistance make it a great choice for audio amplifiers, digital to analog converters, and other digital and analog circuits. Its ease of use, low power consumption, and versatility make it attractive for those interested in designing with low power consumption.

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