HAT2266H-EL-E Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 1mA
Package / Case:	SC-100, SOT-669
Supplier Device Package:	LFPAK
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	23W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3600pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	25nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	12 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	30A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<p>The HAT2266H-EL-E is a single-channel MOSFET (metal-oxide-semiconductor field-effect transistor) which is widely used in a variety of applications. MOSFETs are made up of three layers; the gate, the drain, and the source. The gate is an insulating layer, which prevents current from flowing between the drain and source. A voltage applied to the gate changes the resistance of the MOSFET, controlling the flow of current.</p><p>The HAT2266H-EL-E is among the smallest MOSFETs on the market, measuring just 2.00 x 1.00mm in size. It has a rated drain-source voltage (Vds) of 26V, a drain-source on-resistance of 298m&#x3A9; (Vgs = 10V) and a maximum drain current of 215mA. It has a low-capacitance design, allowing for faster switching speeds, making it ideal for high-frequency applications.</p><p>The HAT2266H-EL-E is primarily used in a variety of portable electronics, where power efficiency and small form factor are key. These include mobile phones and IoT devices. It is also used in automotive applications, in particular fuel injectors and engine control modules. It can also be used in audio amplifiers and medical equipment.</p><p>The HAT2266H-EL-E is a step above other MOSFETs, thanks to its high-temperature-resistant gate, which works in extreme temperatures up to 150°C. This makes it ideal for automotive applications, as they often have to operate in harsh conditions. It also has a low gate-charge design, which reduces the amount of power consumed when operating the device.</p><p>The HAT2266H-EL-E is an excellent choice for a wide range of applications. Its small size makes it ideal for portable electronics, while its high-temperature-resistant gate makes it suitable for automotive applications. Its low gate-charge design reduces power consumption and makes it suitable for high-frequency applications. Its many features make it a valuable addition to any design.</p>

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