Allicdata Part #: | HAT2143H-EL-E-ND |
Manufacturer Part#: |
HAT2143H-EL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 30V 40A 5LFPAK |
More Detail: | N-Channel 30V 40A (Ta) 20W (Tc) Surface Mount LFPA... |
DataSheet: | HAT2143H-EL-E Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | SC-100, SOT-669 |
Supplier Device Package: | LFPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2450pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.1 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The HAT2143H-EL-E is a N-Channel MOSFET, an electronic device that is used to control the opening and closing of a circuit. It is a 3-pin MOSFET, meaning that it has three external connections or pins.
MOSFETs are commonly used in the field of electronics, such as in analog and digital motors, power switching circuits, converters, and many other applications. They are used in these applications due to their ability to control high voltages, currents, and frequencies. The HAT2143H-EL-E is especially useful in applications that require high speed switching, as they are able to operate at frequencies up to 5GHz.
The HAT2143H-EL-E is a desirable device due to its low on-resistance and high current handling capabilities. Its on-resistance allows it to efficiently control the flow of current by providing a low impedance path, while its current handling capability ensures it can handle a large amount of current without experiencing thermal runaway. Its low-voltage drain can also be used to reduce power consumption.
The working principle of the HAT2143H-EL-E is fairly straightforward. It utilizes the property of electric field effect, meaning that current can be controlled by the application of an electric field. In order to control the flow of current, the device uses the electric field to form a barrier, which prevents the current from crossing the source and drain pins. The MOSFET is then said to be in its "on" or "off" state, depending on the state of the electric field.
When the MOSFET is in its "off" state, no current can flow through it and its pins have no voltage. This is known as the depletion region of the MOSFET. When a gate voltage is applied to the device, the electric field changes and the depletion region is diminished, allowing current to flow from the source to the drain.
The HAT2143H-EL-E is a versatile MOSFET and its applications extend beyond the basic switch. It can be used for various functions, such as level shifting, signal transmission, current control, and power management, making it a versatile and reliable choice for a variety of applications.
In summary, the HAT2143H-EL-E is a 3-pin N-Channel MOSFET device. It has a low on-resistance and is capable of handling high current, which makes it well-suited for applications requiring high-speed switching. It utilizes electric field effect to control the flow of current, and its ability to act as a switch, level shifter, signal transmitter, current controller, and power manager make it a reliable choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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