HUFA76407DK8T Allicdata Electronics
Allicdata Part #:

HUFA76407DK8T-ND

Manufacturer Part#:

HUFA76407DK8T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 60V 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 2.5W Surface ...
DataSheet: HUFA76407DK8T datasheetHUFA76407DK8T Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: UltraFET™
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

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The HUFA76407DK8T is a wide operating temperature range silicon N-channel power MOSFET array designed for power management applications. It is optimized for low on-resistance and low gate charge, and a wide range of packaging options are available.

The HUFA76407DK8T is an ideal choice when high switching speed, low power dissipation, and high peak current capability are required. Its unique design offers low on-resistance for a low drop out voltage and allows for low power dissipation, even under heavy loads. Its wide operating temperature range of -40°C to +150°C enables its use in a variety of applications.

The N-channel MOSFET array is typically used for motor control applications, uninterruptible power supplies, and high power switching applications. Its low on-resistance eliminates the need for a bulky heatsink and its wide operating temperature range enables it to operate in a variety of harsh environmental conditions.

HUFA76407DK8T works on the principle of capacitive charge Replenishment (or CCR) which allows the power MOSFET array to provide a low input voltage and support fast switching times. CCR uses a combination of MOSFETs, capacitors, and an input voltage limiter to ensure that the current flowing through the load is closely matched to the supply voltage. This allows the load voltage to remain constant and the power dissipation to be kept low.

The HUFA76407DK8T MOSFET array is also highly resistant to transients, noise and gate-source voltage leaks. Its advanced gate drive circuit ensures a low gate-source plateau and ensures that the MOSFET array can operate at very high frequencies. It also provides an internal D.C. access point which allows the gate to be driven at a higher voltage for improved noise immunity.

The HUFA76407DK8T power MOSFET array is a versatile and reliable solution for a wide range of power management applications. Its low on-resistance and CCR control help to keep power dissipation and switching times low, while its compact size and wide operating temperature range make it suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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