Allicdata Part #: | HUFA76407DK8T-ND |
Manufacturer Part#: |
HUFA76407DK8T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 60V 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 2.5W Surface ... |
DataSheet: | HUFA76407DK8T Datasheet/PDF |
Quantity: | 1000 |
Series: | UltraFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 3.8A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 11.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 330pF @ 25V |
Power - Max: | 2.5W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The HUFA76407DK8T is a wide operating temperature range silicon N-channel power MOSFET array designed for power management applications. It is optimized for low on-resistance and low gate charge, and a wide range of packaging options are available.
The HUFA76407DK8T is an ideal choice when high switching speed, low power dissipation, and high peak current capability are required. Its unique design offers low on-resistance for a low drop out voltage and allows for low power dissipation, even under heavy loads. Its wide operating temperature range of -40°C to +150°C enables its use in a variety of applications.
The N-channel MOSFET array is typically used for motor control applications, uninterruptible power supplies, and high power switching applications. Its low on-resistance eliminates the need for a bulky heatsink and its wide operating temperature range enables it to operate in a variety of harsh environmental conditions.
HUFA76407DK8T works on the principle of capacitive charge Replenishment (or CCR) which allows the power MOSFET array to provide a low input voltage and support fast switching times. CCR uses a combination of MOSFETs, capacitors, and an input voltage limiter to ensure that the current flowing through the load is closely matched to the supply voltage. This allows the load voltage to remain constant and the power dissipation to be kept low.
The HUFA76407DK8T MOSFET array is also highly resistant to transients, noise and gate-source voltage leaks. Its advanced gate drive circuit ensures a low gate-source plateau and ensures that the MOSFET array can operate at very high frequencies. It also provides an internal D.C. access point which allows the gate to be driven at a higher voltage for improved noise immunity.
The HUFA76407DK8T power MOSFET array is a versatile and reliable solution for a wide range of power management applications. Its low on-resistance and CCR control help to keep power dissipation and switching times low, while its compact size and wide operating temperature range make it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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