HUFA76423D3ST

The HUFA76423D3ST is a surface mount N-Channel Field-effect transistor (FET) specifically developed for switching applications in the industrial and automotive markets. Widely used for power switches, motor control, and telecommunications, this type of surface mount FET is very convenient to use, since it is designed for the through-hole mount connection of many automotive and industrial applications.

Application Field

The HUFA76423D3ST can be used for switching applications with high current and voltage ratings. This FET can be used in motor control, signal conditioning and other various power management applications. This device is especially useful for applications that need a stable switching and efficient conduction due to its superior on-resistance, low gate charge, low thermal resistance, and peak current capability.

The HUFA76423D3ST is ideal for controlling solenoid, which is particularly helpful when a digital circuit needs to be used to control a DC motor. The device can also be used as a high-side switch, allowing the board to be used in applications such as automotive door locking and remote engine starting. Additionally, it can be used to control shift registers, LCD backlighting, and power management.

This surface mount FET is suitable for high-current, high-voltage, and non-linear power switching applications. It is suitable for applications with higher performance requirements, such as audio amplifiers and light dimmers, where its thermal management and low gate charge can reduce power dissipation and help simplify the design.

Working Principle

The working principle of the HUFA76423D3ST is based on the same principles as all other surface mount FETs; the gate-source voltage and drain-source voltage control the conduction of a channel between the source and drain. When the gate-source voltage is high and the drain-source voltage is low, the channel is closed or "shut off" and no current can flow between the source and drain. When these voltages are reversed, the channel is "opened" and current can flow between the source and drain.

The gate-source voltage and drain-source voltage determine the resistance of the channel, which is also referred to as the on-resistance. This resistance is how much current can flow between the source and drain when there is a given voltage across the channel. This is why, for a given voltage across the channel, higher gate-source voltages will result in higher on-resistance values.

The efficiency of the FET is determined by the gate-source and drain-source voltages, as well as the on-resistance of the channel. The HUFA76423D3ST has an impressive on-resistance rating of 9.8 mΩ, as well as a low-gate charge which provides superior thermal performance. This makes it well suited for high-current and high-voltage switching applications.

Conclusion

The HUFA76423D3ST is a surface mount N-Channel Field-effect transistor (FET) specifically developed for switching applications in the industrial and automotive markets. It is suitable for applications with higher performance requirements, such as audio amplifiers and light dimmers, where its thermal management and low gate charge can reduce power dissipation and help simplify the design. With its wide range of applications, superior on-resistance, and low gate charge, the HUFA76423D3ST is an ideal choice for high-current, high-voltage, and non-linear power switching applications.