| Allicdata Part #: | HUFA75617D3ST-ND |
| Manufacturer Part#: |
HUFA75617D3ST |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 100V 16A DPAK |
| More Detail: | N-Channel 100V 16A (Tc) 64W (Tc) Surface Mount TO-... |
| DataSheet: |  HUFA75617D3ST Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252AA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 64W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 570pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 20V |
| Series: | UltraFET™ |
| Rds On (Max) @ Id, Vgs: | 90 mOhm @ 16A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The HUFA75617D3ST is a single N-Channel enhancement-mode field-effect transistor (FET) which utilizes the advanced high cell density DMOS technology. This device provides an excellent RDS(on) of low Gate charge, fast switching and low thermals. It is designed to withstand a maximum drain-source voltage of 20V and can handle up to 243A of continuous drain current and 500A of pulsed drain current. It is remarkably suitable for switching and linear applications.The HUFA75617D3ST can be used in many applications, such as automotive, industrial AC inverter, welding, power tools, smart power converters and other applications requiring a fast and efficient switching power MOSFET. It is also extensively used in high voltage DC-DC converters, Point-of-Load DC-DC converters and other DC-DC converters.The HUFA75617D3ST is an enhancement-mode power MOSFET and its working principle is based on the basic MOSFET structure. In essence, it consists of an insulated gate and four terminals; the drain, source, body and gate. The device can be considered as two PN junctions, each consisting of three sections; a drain-source junction, drain-body junction and source-body junction. The insulating layer on the gate creates an electric field when a positive voltage is applied to it, which enables flow of current between the drain and source. This principle is known as the "voltage-controlled current source”.When a positive voltage is applied to the gate, the electric field created penetrates through the oxide layer on the substrate and an electric field forms between the P and N regions of the substrate. As the charge carriers present in the P and N regions move towards each other, a conductive channel is created between the drain and source terminals and current can flow between them. This is known as an enhancement-mode MOSFET, as the formation of the channel is imposed by the presence of an electrical field on the gate.The HUFA75617D3ST is also equipped with a protection circuit which ensures that the device operates safely. This circuit is formed by two N-channel MOSFETs, one of which is placed between the gate and drain and the other between the body and source. These two transistors together ensure that the current flowing in the device never exceeds the threshold value.In conclusion, the HUFA75617D3ST is a single N-Channel enhancement-mode FET which is extensively used in a wide range of applications, such as automotive, industrial AC inverter and welding. It works on the principle of a voltage-controlled current source and is equipped with a protection circuit for added safety and reliability.
The specific data is subject to PDF, and the above content is for reference
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