Allicdata Part #: | HUFA76419D3S-ND |
Manufacturer Part#: |
HUFA76419D3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 20A DPAK |
More Detail: | N-Channel 60V 20A (Tc) 75W (Tc) Surface Mount TO-2... |
DataSheet: | HUFA76419D3S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 27.5nC @ 10V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 37 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The HUFA76419D3S is a field-effect transistor (FET) that belongs to the single series of MOSFETs. In other terms, this FET is specialized in controlling, amplifying and switching electronic signals in a circuit. It is a four-terminal field-effect transistor device that helps control the current flow and voltage levels across a single conductive channel, replacing the use of multiple transistors.
This transistor\'s four terminals are the gate, drain, source and load. Among these, the gate is the most essential one since it aids in controlling the current flowing through the channel between the sources and drains. The gate is an insulated strip of metal oxide. It has a voltage applied to it, varying the oxide barrier and thus allowing the current to flow in a positive or negative direction.
In terms of its application, the HUFA76419D3S FET is used as an amplifier, regulator or rectifier. Since it is smaller in size and can work efficiently at lower voltages, making it perfect for various tasks such as power conversion, audio amplifiers and switching circuits. Additionally, it is often used in communication devices and modern home appliances.
In terms of the HUFA76419D3S FET\'s working principle, this transistor is based on the field effect principle. This means that the current flow through the transistor depends on the electric field applied to the gate terminal. If a positive voltage is applied to the gate, the electric field will be increased, hence allowing more current to flow through the transistor. The result is a higher drain current which is explained by the high reduction of resistance between the two. Conversely, when a negative voltage is applied to the gate terminal, the electric field is decreased, resulting in a lower current flow.
The HUFA76419D3S FET works on the principle of depletion and enhancement modes. In the depletion mode, the voltage applied to the source-drain terminal is low, thus preventing current from flowing. On the other hand, when the electric field is increased, the so-called "enhancement mode" begins to take effect, allowing for current to flow. The magnitude of this electric field affects the resistance between the source-drain terminals.
In conclusion, with its highly specialized design, the HUFA76419D3S FET is a suitable transistor for many different purposes. It is able to control the current flow and voltage levels between its four terminals, proving its reliability when it comes to various applications in the field of electronics. Moreover, its highly efficient working principle is based on the depletion and enhancement modes, making it a reliable switch and amplifier.
The specific data is subject to PDF, and the above content is for reference
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