Allicdata Part #: | HUFA75823D3S-ND |
Manufacturer Part#: |
HUFA75823D3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 14A TO-252AA |
More Detail: | N-Channel 150V 14A (Tc) 85W (Tc) Surface Mount TO-... |
DataSheet: | HUFA75823D3S Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 85W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 54nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The HUFA75823D3S is a single N-Channel Enhancement Mode MOSFET, specifically designed to provide excellent performance in power switching applications, while also maintaining low on-resistance figures.
MOSFETs, or Metal Oxide Semiconductor Field Effect Transistors, are one of the most widely used transistors in modern electronics. This is mainly due to their high switching speeds and low input capacitances. As such, they are ideal for use in a variety of power switching applications, such as motor control, switching regulators, and lighting dimmers.
The HUFA75823D3S is a single N-Channel Enhancement Mode MOSFET, made from high-quality components that provide excellent performance and reliability. The transistor has a low on-resistance of 0.12Ω, allowing for efficient power switching, and an impressive gate 210V breakdown voltage.
One of the most important aspects of the HUFA75823D3S is its low input capacitance. This feature allows the transistor to switch quickly, with fast rise and fall times. This makes it perfect for use in high-frequency switching applications, such as switching converters, lighting control, and motor control.
The low-input capacitance makes the HUFA75823D3S ideal for use in high-frequency switching applications, due to its low input capacitance. This allows the transistor to quickly switch, instead of storing charge, making it a great choice for high-speed switching applications.
The HUFA75823D3S also has an impressive gate-source breakdown voltage of 210V, making it suitable for use in high-voltage power switching applications. The high breakdown voltage allows the transistor to operate without damage at higher voltage levels, providing greater reliability and use in a variety of applications.
In addition, the low on-resistance of the HUFA75823D3S also enables efficient power switching. This means that less heat is generated during operation, resulting in improved reliability, performance, and efficiency.
In summary, the HUFA75823D3S is an ideal solution for a variety of power switching applications. Its low input capacitance, high breakdown voltage, and low on-resistance make it capable of providing reliable performance in a variety of switching applications. As such, the HUFA75823D3S is an ideal choice for a variety of power switching applications.
The specific data is subject to PDF, and the above content is for reference
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