HUFA76413D3ST

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The HUFA76413D3ST is an N-channel Enhancement Mode Field Effect Transistor, better known as FET, which can be categorized as a single MOSFET. This semi-conducting device is used for numerous applications due to its performance characteristics, immunity against electrostatic discharge, and operation. It is ideal for operations that require high power efficiency, high frequency performance and easy switching.

The HUFA76413D3ST is quite commonly used in the automotive industry due to its ability to operate in the temperature range of -55°C to +150°C and its small size. It is best used in applications where high switching speed and high power efficiency are essential, such as Automotive Pressure Sensors, Ignition Systems and Anti-lock Braking Systems. It is also used in several types of consumer electronics, such as TVs and DVD players, to provide reliable and robust operation.

The HUFA76413D3ST is often used in applications that require high current carrying capability and fast switching, such as motor drives, switching power supplies and solenoid control systems due to its low on-state resistance, low gate charge and low gate-source capacitance. Its environment-friendly design allows it to be used in applications that are either lead-free or ROHS compliant. Thus, it is the ideal choice for designers and engineers who need to meet strict legal requirements.

The HUFA76413D3ST FETs operates on the principle of the "Junction Gate Field Effect", also known as the metal-oxide semiconductor field-effect transistor. This device has two distinct regions, the source region and the drain region. The source connects to the gate electrode and the gate voltage is used to control the device’s operation. The source and drain regions are separated by a very thin layer of metal-oxide, which acts as an insulation layer and prevents unwanted current flow through the device.

The HUFA76413D3ST FETs can be used on either its drain or its source terminals, depending on the application. In the configuration where the FET is connected directly to the load, the drain acts as the controlling terminal and the source acts as the output terminal. In this arrangement, the FET allows or restricts the current flow depending on the voltage at the gate.

When operating on the source terminal configuration the FET acts as an open switch. In this configuration, the Drain region is the controlling terminal and the Source is the output. When the voltage at the gate is high, the current is allowed to flow through the FET from source to drain. Similarly, when the voltage is low, the current flow is blocked and the FET acts as an open switch.

In addition to its applications to the automotive and consumer electronics sectors, the HUFA76413D3ST FETs is also widely used for industrial applications with strict requirements for immunity against electrostatic discharge and temperature operations. With its low power consumption, excellent thermal properties and its small size, the HUFA76413D3ST offers designers and engineers an ideal choice for modern electronic products.

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