HUFA75344P3_F085 Allicdata Electronics
Allicdata Part #:

HUFA75344P3_F085-ND

Manufacturer Part#:

HUFA75344P3_F085

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 55V 75A TO-220AB
More Detail: N-Channel 55V 75A (Tc) 285W (Tc) Through Hole TO-2...
DataSheet: HUFA75344P3_F085 datasheetHUFA75344P3_F085 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q101, UltraFET™
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 20V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
FET Feature: --
Power Dissipation (Max): 285W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Description

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The HUFA75344P3_F085 is a transistor that falls within a single category of field effect transistors, more specifically metal-oxide-semiconductor field-effect transistors, also referred to as MOSFETs. These types of transistors are commonly used in a variety of electronic applications and have become increasingly prevalent with their development, as their slowly increasing featureset allows them to be more and more useful in a variety of electronics. As such, the HUFA75344P3_F085 is an important component in a number of applications and understanding its use cases and working principles is key to being able to make the most of it and identify it from other transistors.

The HUFA75344P3_F085’s typical application area is in RF applications and high-speed switching applications, two commonly encountered areas in which transistors are used. These applications utilize the fast switching speed of the HUFA75344P3_F085, as well as its low on-resistance to ensure proper current flow and quickly respond to inputs or changes. Thus, it is particularly well-suited to applications that demand quick response times, such as radios and other high-frequency devices.

Additionally, the HUFA75344P3_F085 also serves as a connecting point between systems, as it offers a low on-resistance, meaning that it is able to handle more current than other transistors with traditional wire connections. This feature makes it ideal for applications that require high levels of current, which, when combined with its high-speed switching and low on-resistance, makes it an excellent choice for devices such as military and avionic systems.

At the core of its design and operation, the HUFA75344P3_F085 is a type of MOSFET, which is a field effect transistor. MOSFETs operate through the application of a voltage to the gate electrode, which controls the flow of current through the source and drain, allowing the device to be turned on or off. The amount of current that is able to flow through the transistor is directly dependent on the applied voltage, and the amount of resistance will be determined by the size and design of the HUFA75344P3_F085 and the characteristics of the source and drain.

The HUFA75344P3_F085 also has the ability to serve as an amplifier, as the applied gate voltage can be adjusted to control the power of the signal. This can be beneficial for applications such as amplifiers for audio systems or sound systems as it allows signals to be amplified or modified as needed. Since the HUFA75344P3_F085 is able to offer a very high current gain, this means that it can function in these amplifying applications easily, and with a very low noise level.

The HUFA75344P3_F085 is an exceedingly versatile type of transistor that can serve a number of different applications in RF and high-frequency areas, as well as amplifier circuits and signal modification. Thanks to its low on-resistance and fast operation, it can be used in a multitude of areas and it is clear why this MOSFET has become so popular. The combination of its features and low price makes it an attractive choice for many projects and electronics, ensuring that it will continue to be a useful component in electronics and applications going forward.

The specific data is subject to PDF, and the above content is for reference

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