HUFA76429D3

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A HUFA76429D3 is a single MOSFET, or a metal oxide semiconductor field effect transistor. It is an essential component that can be found in many modern electronic circuits, responsible for regulating and controlling current flow. This type of device is also referred to as a voltage-controlled device.

A MOSFET typically has three terminals consisting of a source, a drain and a gate. The voltage applied to the gate terminal determines the conductivity of the device, allowing the current flow between source and drain terminals to be controlled. Different versions of MOSFETs have various levels of performance characteristics such as maximal voltage, current, power dissipation and breakdown voltage.

The HUFA76429D3 is a silicon Wettable Flank packaged single N-channel enhancement mode MOSFET. It is rated for a maximum drain-source breakdown voltage of 30V, a drain-source on-state resistance of 7.8Ω and an on-state drain current of 10.5 A. The maximum power dissipation of this device is 80 W and it has an 8.6 nC maximum gate charge.

The HUFA76429D3 is used in various applications due to its special characteristics. Some common applications of this single MOSFET are high-side switches, low-side switches, audio amplifiers, DC-DC converters, power management circuit, battery management systems and power amplification circuits. It can also be used as a replacement for other transistors like the NPN or PNP.

In terms of application field and working principle, the HUFA76429D3 operates in the same way as other MOSFETs. The gate–source voltage of the device will control the current flow between source and drain terminals. When the gate–source voltage is applied, a conductive channel is formed through the body of the MOSFET which allows for a source–drain current to flow. The current is regulated through the gate–source voltage.

The HUFA76429D3 is capable of operating at very high frequencies. This allows it to be used as a switching device in many high-speed switching applications like switching power supplies and audio amplifiers. As stated earlier, it can be used as a replacement for other transistors such as NPN or PNP transistors in many circuits. This is due to the fact that the HUFA76429D3 has a higher breakdown voltage, lower on-state resistance, higher current capability and lower gate charge compared to other transistors.

In conclusion, the HUFA76429D3 is a single MOSFET, is rated with a drain-source breakdown voltage of 30V, an on-state resistance of 7.8Ω and an on-state drain current of 10.5 A. It is used in many applications such as high-side switches, low-side switches, audio amplifiers, DC-DC converters, power management circuit, battery management systems and power amplification circuits. It is also capable of working at high frequencies, making it suitable for high-speed switching applications. The working principle of this device is determined by the gate–source voltage applied to it, forming a conductive channel which allows for a source–drain current to flow.

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