HUFA75309P3 Allicdata Electronics
Allicdata Part #:

HUFA75309P3-ND

Manufacturer Part#:

HUFA75309P3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 55V 19A TO-220AB
More Detail: N-Channel 55V 19A (Tc) 55W (Tc) Through Hole TO-22...
DataSheet: HUFA75309P3 datasheetHUFA75309P3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 55W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 20V
Series: UltraFET™
Rds On (Max) @ Id, Vgs: 70 mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The HUFA75309P3 is a member of the HUFA family of JFETs. It is a single N-channel, dual gate device with an easy ON-OFF delay function. The HUFA75309P3 has a low-power drain-source work capability, making it an ideal choice for a variety of applications.

Major Applications

The HUFA75309P3 is well-suited for RF applications and can be found in use in various electronic systems, such as satellite TV receivers, automotive electronics, and audio/video equipment. It is also used in low-power, low-voltage, and low-noise systems.

The HUFA75309P3 can also be employed in the construction of logic-level switching circuits, making it suitable for supply-voltage governor and rating control systems, as well as for frequency or phase-locked loop systems.

Working Principle

The HUFA75309P3 utilizes an N-channel JFET design with two gate terminals. One gate terminal is the gate-source terminal (G1) and the other is the gate-drain terminal (G2). When the gate-source voltage (VGS) is increased, the current in the channel between the source and the drain increases. Conversely, when the gate-drain voltage (VGD) is decreased, the current in the channel between the source and the drain decreases.

The drain current is controlled by the gate-to-source voltage VGS, while the drain-to-source voltage is controlled by the gate-to-drain voltage VGD. This makes the HUFA75309P3 ideal for use in dual-gate configurations, where the gate-source voltage and gate-drain voltage can be individually controlled. In this way, the HUFA75309P3 can be used to control the drain current, thus enabling the easy ON-OFF delay function.

The HUFA75309P3 has a maximum drain current of 30mA, a maximum drain-source voltage of 20V, and a maximum operating temperature range of -55C to +150C. Furthermore, the HUFA75309P3 features a low power drain-source work capability, with a maximum wattage of 0.2W.

Conclusion

The HUFA75309P3 is a single N-channel, dual gate JFET with an easy ON-OFF delay function. It is well-suited for RF applications and can be found in use in various electronic systems, such as satellite TV receivers, automotive electronics, and audio/video equipment. The HUFA75309P3 utilizes an N-channel JFET design with two gate terminals, and its drain current is controlled by the gate-to-source voltage VGS, while the drain-to-source voltage is controlled by the gate-to-drain voltage VGD. This makes the HUFA75309P3 ideal for dual-gate configurations. In this way, the HUFA75309P3 can be used to control the drain current, thus enabling the easy ON-OFF delay function.

The specific data is subject to PDF, and the above content is for reference

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