Allicdata Part #: | HUFA75309P3-ND |
Manufacturer Part#: |
HUFA75309P3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 19A TO-220AB |
More Detail: | N-Channel 55V 19A (Tc) 55W (Tc) Through Hole TO-22... |
DataSheet: | HUFA75309P3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 55W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 19A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The HUFA75309P3 is a member of the HUFA family of JFETs. It is a single N-channel, dual gate device with an easy ON-OFF delay function. The HUFA75309P3 has a low-power drain-source work capability, making it an ideal choice for a variety of applications.
Major Applications
The HUFA75309P3 is well-suited for RF applications and can be found in use in various electronic systems, such as satellite TV receivers, automotive electronics, and audio/video equipment. It is also used in low-power, low-voltage, and low-noise systems.
The HUFA75309P3 can also be employed in the construction of logic-level switching circuits, making it suitable for supply-voltage governor and rating control systems, as well as for frequency or phase-locked loop systems.
Working Principle
The HUFA75309P3 utilizes an N-channel JFET design with two gate terminals. One gate terminal is the gate-source terminal (G1) and the other is the gate-drain terminal (G2). When the gate-source voltage (VGS) is increased, the current in the channel between the source and the drain increases. Conversely, when the gate-drain voltage (VGD) is decreased, the current in the channel between the source and the drain decreases.
The drain current is controlled by the gate-to-source voltage VGS, while the drain-to-source voltage is controlled by the gate-to-drain voltage VGD. This makes the HUFA75309P3 ideal for use in dual-gate configurations, where the gate-source voltage and gate-drain voltage can be individually controlled. In this way, the HUFA75309P3 can be used to control the drain current, thus enabling the easy ON-OFF delay function.
The HUFA75309P3 has a maximum drain current of 30mA, a maximum drain-source voltage of 20V, and a maximum operating temperature range of -55C to +150C. Furthermore, the HUFA75309P3 features a low power drain-source work capability, with a maximum wattage of 0.2W.
Conclusion
The HUFA75309P3 is a single N-channel, dual gate JFET with an easy ON-OFF delay function. It is well-suited for RF applications and can be found in use in various electronic systems, such as satellite TV receivers, automotive electronics, and audio/video equipment. The HUFA75309P3 utilizes an N-channel JFET design with two gate terminals, and its drain current is controlled by the gate-to-source voltage VGS, while the drain-to-source voltage is controlled by the gate-to-drain voltage VGD. This makes the HUFA75309P3 ideal for dual-gate configurations. In this way, the HUFA75309P3 can be used to control the drain current, thus enabling the easy ON-OFF delay function.
The specific data is subject to PDF, and the above content is for reference
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