HUFA75321P3

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	93W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	680pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	44nC @ 20V
Series:	UltraFET™
Rds On (Max) @ Id, Vgs:	34 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	35A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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.The HUFA75321P3 is a high-quality, high-performance single N-channel enhancement-mode MOSFET from Toshiba. This semiconductor device is a discrete component, consisting of a single MOSFET built from a wafer of silicon on top of an insulating substrate. The HUFA75321P3 is available in a variety of package types, so it can be mounted and connected to a circuit board for versatile applications. MOSFETs are used in many different applications, from power supplies and voltage regulators to amplifiers and logic circuits. The HUFA75321P3 has a low on-resistance of just 10 mΩ, making it suitable for applications requiring high power density and low power dissipation. It can be used to control large currents and can perform fast switching operations with very little power loss.In addition, the HUFA75321P3’s flexibility makes it suitable for a range of applications, such as motor control circuits, power converters, and switching power supplies. Its truly low gate-charge characteristics also make it suitable for high-speed high-frequency power applications. When used in such circuits, this MOSFET can reduce the gate charging and switching times, resulting in a faster response and higher efficiency.The HUFA75321P3 is an enhancement-mode MOSFET, meaning it can be biased into the conduction region even with no gate voltage applied. The device consists of a gate, source, and drain, and the source is connected to the substrate. This source gives the MOSFET its current carrying capability, and the gate creates a field effect that controls the size of the current flowing through the device. The gate can be connected to either a positive or negative voltage control signal, and when this voltage exceeds a certain threshold, the MOSFET turns on and allows current to flow between the source and drain. The HUFA75321P3 is an ideal choice for high-power, high-speed applications. It can handle up to 25A of continuous drain current and can switch off to 500V. Its low gate charge and high transconductance also make it great for high frequency applications. The device has a thermal stability of 125°C, so it can be used in high-temperature applications.Overall, the HUFA75321P3 from Toshiba combines high performance with great flexibility, making it a dependable choice for a variety of applications. The device’s features make it well-suited to applications requiring high power density and low power dissipation, as well as fast switching and low gate charge. The device is highly reliable and can resist both thermal stress and shock events. It can be used in many different applications, including motor control circuits, switching power supplies, and logic circuits.

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