HUFA75321D3S

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252AA
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	93W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	680pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	44nC @ 20V
Series:	Automotive, AEC-Q101, UltraFET™
Rds On (Max) @ Id, Vgs:	36 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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HUFA75321D3S belongs to a kind of transistor with field effect and MOSFET structure. This type of transistor is suitable for use in medium and high power switch circuits, as well as in analog circuits that require high precision control signals. This paper will focus on the application field and working principle of HUFA75321D3S.The main application of HUFA75321D3S is medium and high power switch circuits. It has been widely used in the fields of solid-state relays, modular power electronic devices and intelligent medium and high power switching systems. The HUFA75321D3S transistor can operate with a peak voltage of up to 900V, making it well suited for use in high voltage circuits. In addition, the integrated protection circuits and temperature compensation ensure a stable long-term operating temperature.The working principle of the HUFA75321D3S transistor can be divided into two parts. The first part is the control of the current path flow through the transistor. This is done by means of the Gate Terminal voltage. When the Gate Terminal voltage is High, the current path flow is raised to allow switching action to occur. When the Gate Terminal voltage is Low, the current path flow is decreased, causing the transistor to switch off.The second part of the working principle concerns the control of the voltage and current relationship of the transistor. This is achieved through the so called Drain Terminal voltage. By controlling the Drain Terminal voltage, the voltage and current relationship of the transistor can be regulated, thus allowing the transistor to operate with maximum efficiency.In summary, HUFA75321D3S can be used in medium and high power switch circuits, and its working principle can be divided into two parts: the control of the current path flow through the transistor by variations in the Gate Terminal voltage; and the control of the voltage and current relationship of the transistor by varying the Drain Terminal voltage. With such features, the HUFA75321D3S is the ideal choice for mission-critical applications, such as analog circuits that require high precision control signals.

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