HUFA76609D3 Allicdata Electronics
Allicdata Part #:

HUFA76609D3-ND

Manufacturer Part#:

HUFA76609D3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 10A TO-251AA
More Detail: N-Channel 100V 10A (Tc) 49W (Tc) Through Hole TO-2...
DataSheet: HUFA76609D3 datasheetHUFA76609D3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 49W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Series: UltraFET™
Rds On (Max) @ Id, Vgs: 160 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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HUFA76609D3 is a high-speed, ultra-low on-resistance and maximum current FET. It is a type of single, enhancement-mode field effect transistor (FET) that has been designed for high speed applications with low gate charge. It can be used as an input or output transistor to improve the performance of integrated circuits. The HUFA76609D3 FET is ideal for amplifying and switching circuits at high frequency, and for applications like switching power supplies, DC-DC converters, and switched-mode power amplifiers.

HUFA76609D3 has special characteristics that distinguish it from other FETs. It has a low turn-on voltage, meaning that it can operate at lower voltage than normal. It also has a higher input capacitance than other FETs. This allows it to react faster and can help reduce power consumption.

The working principle of the HUFA76609D3 FET is based on the electrostatics principle. The gate terminal of the FET is connected to a voltage source, which creates an electric field. This field attracts electrons to the source and drain of the FET. When a voltage is applied to the gate terminal, the electrons in the source become attracted to the gate. This process is called inversion. As a result, current can flow through the FET in either direction.

HUFA76609D3 can be used in a wide range of applications, including RF amplifiers, RF switches, mixers, saturable inductors, switching DC-DC converters, mobile phone PA’s, analog switches, and voltage regulators. It is suitable for high speed digital switching, and can be used in both low and high frequency analog circuits. It can also be used in low noise pre-amplifiers.

This transistor is well suited for audio applications, as it has very low input capacitance, allowing clean audio signals. It also has high switching speeds and very low loss up to high frequencies, allowing for good signal transmission for high frequencies. It is particularly suited for low voltage applications, where it can operate with low power consumption.

The HUFA76609D3 FET is a highly efficient, fast-acting device that can be used in a wide variety of applications. It is an ideal choice for high-speed digital switching, low voltage applications, and audio applications that require low noise and high signal integrity. With its low on-resistance and wide gate charge range, it offers excellent performance in high-frequency circuits.

The specific data is subject to PDF, and the above content is for reference

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