Allicdata Part #: | HUFA76619D3S-ND |
Manufacturer Part#: |
HUFA76619D3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 18A DPAK |
More Detail: | N-Channel 100V 18A (Tc) 75W (Tc) Surface Mount TO-... |
DataSheet: | HUFA76619D3S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 767pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 85 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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HUFA76619D3S is a type of three-terminal field effect transistor, specifically a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). MOSFETs are unipolar transistors which have a three terminal source, drain, and gate and are usually fabricated using a semiconductor material such as silicon. MOSFETs are highly compact and allow for complex logic and signal routing capabilities.
The HUFA76619D3S is a single P-channel MOSFET (PMOS) transistor which offers an ON resistance of 28mΩ and a total gate charge of 21nC. This transistor is typically used as a load switch in applications ranging from power management and hot-swap protection to audio amplifiers and motor control circuits.
MOSFETs function by altering the electric field at the transistor\'s gate terminal relative to the source. When positive voltage is applied to the gate, it creates an inversion layer in the depletion zone between the source and drain which effectively creates a conducting channel between the two. This allows current to pass between the source and drain, thus acting as an electronic switch. Thus, by using the voltage applied to the gate, the MOSFET can be used to control the amount of current that passes through the transistor.
The HUFA76619D3S is an enhancement mode MOSFET that does not require an initial gate voltage for it to switch on. Instead, it will switch on when the gate voltage is greater than the source voltage by a certain amount called the threshold voltage. The amount of gate voltage required to switch the MOSFET on is called the gate-source threshold voltage and is typically between 1 and 4 volts.
MOSFETs are used in a wide variety of applications where precise control of current is necessary. Common examples include power supplies, switching regulators, logic control circuits, and motor control circuits. The HUFA76619D3S is used specifically in applications such as power management, hot-swap protection circuits, and audio amplifiers.
In power management applications, the HUFA76619D3S MOSFET is used as a load switch to turn circuit elements on or off based on changes in power supply voltage. In hot-swap applications, it is used to protect sensitive circuit elements from inrush currents. In audio amplifier circuits, the MOSFET is used to provide the audio signal with voltage amplification.
In summary, the HUFA76619D3S is a single P-channel MOSFET transistor used for applications such as power management, hot-swap protection, and audio amplification. It has an on resistance of 28mΩ, a total gate charge of 21nC, and a gate-source threshold voltage between 1 and 4 volts.
The specific data is subject to PDF, and the above content is for reference
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