Allicdata Part #: | HUFA75309D3S-ND |
Manufacturer Part#: |
HUFA75309D3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 19A DPAK |
More Detail: | N-Channel 55V 19A (Tc) 55W (Tc) Surface Mount TO-2... |
DataSheet: | HUFA75309D3S Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 55W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 19A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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HUFA75309D3S is a 3-pin single N-channel insulated gate FET (IGFET) designed for high frequency, high-efficiency applications. This device features reduced EMI noise, fast switching, extended temperature range, low on-state resistance and improved reliability.
It is a type of transistor, particularly in the category of field-effect transistors (FETs). In an FET, a voltage applied to the gate controls the current flow from the source to the drain. This is much like a normal transistor, but the difference is that in an FET, the gate acts as an insulator and the majority of the current flow is between the source and drain. The main application of HUFA75309D3S are in power switching, high-efficiency converters, and high-frequency circuits.
The working principle of this device can be explained in two steps. Firstly, a voltage applied to the gate creates an electric field which modifies the width of the transistor\'s channel in the region between the gate and the source. Secondly, electrons and holes move through the channel and out of the source, changing the current flow between the source and the drain. This change of current flow can be used to switch off or on various circuits.
HUFA75309D3S has a superior heat dissipation capability, making it an appropriate device for applications involving high power such as switching power supplies, DC-DC converters, motor controls and UPS systems. Additionally, due to its low gate threshold voltage and high transconductance, this device offers precision operation in audio amplifiers and small signal circuits.
The device is also suitable for use in some computers and handheld electronic devices, owing to its superior noise immunity. Due to its extended temperature range, it is an ideal choice for applications which require extended temperature ranges such as automotive, industrial and medical applications.
In summary, HUFA75309D3S is an efficient and reliable 3-pin single N-channel insulated gate FET (IGFET) suitable for applications requiring high frequency, high-efficiency and extended temperature range operation. Featuring an improved design, it offers reduced EMI noise, fast switching, low on-state resistance and improved reliability. Thanks to its superior heat dissipation capability, this device is an ideal choice for applications involving high power such as switching power supplies, DC-DC converters, motor controls and UPS systems.
The specific data is subject to PDF, and the above content is for reference
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