HUFA75307D3 Allicdata Electronics
Allicdata Part #:

HUFA75307D3-ND

Manufacturer Part#:

HUFA75307D3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 55V 15A IPAK
More Detail: N-Channel 55V 15A (Tc) 45W (Tc) Through Hole TO-25...
DataSheet: HUFA75307D3 datasheetHUFA75307D3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 20V
Series: UltraFET™
Rds On (Max) @ Id, Vgs: 90 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The HUFA75307D3 is a pole 3 N-Channel Enhancement mode MOSFET which has an avalanche energySpecification. It has been designed specifically for use in automotive applications, making itvaried from standard MOSFETs with different breakdown voltage (BVDSS), drain-source on-stateresistance (RDS(on)) and gate pre-charge voltage.


The HUFA75307D3 is a type of N-Channel MOSFET, meaning it switches from an off position to anon position when a voltage is applied. It can then be used to control the current flow through acircuit, usually by switching on and off in response to a signal at its gate.


The HUFA75307D3 has the special ability to be used in automotive applications, and has been designedspecifically with this purpose in mind. It is capable of operating under a wide range of conditions,including high temperature, high frequency and low voltage operations.


The HUFA75307D3 is also capable of withstanding high inrush currents and has been designed to protectcircuits by providing thermal shutdown protection. This is a feature which can be useful when using theMOSFET in automotive applications, as it can detect any instances of the device becoming too hot, andthen shut the circuit off to prevent possible damage.


The mechanism through which this MOSFET operates is essentially the same as other MOSFETs. It usesthe movement of electrons through a gate insulator to allow current to pass through it and to then allowa larger current to pass through the device. This is achieved by applying a positive voltage to the gate,which attracts electrons away from the drain and causes a potential difference between the two.


The operation of the HUFA75307D3 is quite simple, and can be summarized as follows: When a voltage is applied to the gate, the gate insulation attracts electrons away from the drain, thus creating anelectrical field between them. This in turn attracts additional electrons to the gate, further increasingthe potential difference between the two and allowing a larger current to pass through the device.


The HUFA75307D3 is a great choice for automotive applications and has been designed specificallywith this purpose in mind. It is simply to use, can withstand high temperatures, high frequencies and lowvoltage operations, and has the special feature of providing thermal shutdown protection. This makes itan ideal choice for those looking to protect their circuits.

The specific data is subject to PDF, and the above content is for reference

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