HUFA75309T3ST

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223-4
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	352pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	23nC @ 20V
Series:	UltraFET™
Rds On (Max) @ Id, Vgs:	70 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	3A (Ta)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

HUFA75309T3ST is a new type of transistor that has recently been released in the market. It is a single pack FET (Field Effect Transistor) that provides a wide range of applications and features.The HUFA75309T3ST is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is classified as a single pack transistor. This type of transistor has a metal gate that is insulated from a layer of conducting material. This gate is used to control the flow of electrical current through the transistor. The number of these types of transistors found on the market is increasing and the HUFA75309T3ST is one of them.The HUFA75309T3ST transistor has several features that make it suitable for use in a range of applications. First, it is designed to be used in high-power switching applications. With its high operating voltage of 100V and a maximum drain current rating of 10A, the device can be used in applications where it is necessary to switch large amounts of power. Moreover, the device’s drain-to-source on-state resistance rating is 4.5 ohms, providing a low on-state voltage drop. This makes the device ideal for applications such as switching regulators, or voltage controlled circuits.In addition, the HUFA75309T3ST transistor has a low gate drive threshold voltage, making it easier to control the switch operation. This is especially important in applications that require high speed switching.The transistor also features a low thermal resistance junction-to-ambient case rating. This allows the device to transfer more heat away from the transistor, reducing the risk of device failure.The working principle of the HUFA75309T3ST is quite straightforward. The drain and source of the transistor act as the input and output terminals, respectively. When a voltage is applied to the gate terminal, it creates a channel between the drain and source. This channel enhances the electrical conductivity between the drain and source, allowing current to flow from drain to source. This process is known as transistor biasing, and it allows the transistor to amplify the voltage or current of the signal applied to the drain and source. As a result, the signal does not need to be amplified externally.The HUFA75309T3ST is an excellent choice for use in modern electronics applications. With its high power switching capability, low thermal resistance, and low drain-to-source on-state resistance rating, it is a great choice for many different applications. Additionally, its low gate drive threshold voltage provides a wide range of control and applications. With such a wide range of features and benefits, it is easy to see why the HUFA75309T3ST is becoming a popular choice for many different electronic devices.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description